A5074370123- Semiconductor materials and interfaces
- Silicon Carbide Semiconductor Technologies
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Ga2O3 and related materials
- Aluminum Alloys Composites Properties
- Silicon Nanostructures and Photoluminescence
- Ion-surface interactions and analysis
- Silicon and Solar Cell Technologies
- Copper Interconnects and Reliability
- GaN-based semiconductor devices and materials
- Integrated Circuits and Semiconductor Failure Analysis
- Nanowire Synthesis and Applications
- Molecular Junctions and Nanostructures
- High Entropy Alloys Studies
- Advanced ceramic materials synthesis
- 3D IC and TSV technologies
- High-Temperature Coating Behaviors
- Metal and Thin Film Mechanics
- Electronic Packaging and Soldering Technologies
- Advanced Surface Polishing Techniques
- Graphene research and applications
- Intermetallics and Advanced Alloy Properties
- Organic Electronics and Photovoltaics
STMicroelectronics (Switzerland)
2015-2024
STMicroelectronics (Italy)
2013-2024
Institute for Microelectronics and Microsystems
2017
STMicroelectronics (Czechia)
2016
University of Catania
2005-2008
This Letter reports on the improvement of morphological and electrical behavior in Ti/Al/Ti Ohmic contacts AlGaN/GaN heterostructures by insertion a thin carbon interfacial layer. In particular, presence layer between metal stack AlGaN surface leads to lowering annealing temperature (down 450 °C) required obtain linear I–V curves morphology. The dependence specific contact resistance was explained thermionic field emission, with reduction barrier height ΦB down 0.62 eV annealed experimental...
Photodetection in the ultraviolet (UV) region has drawn extensive attention owing to its various applications industrial, environmental, and even biological fields. In this letter, we report on morphological electro-optical characteristics of continuous thin metal film Ni <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Si/4H-SiC photodiodes properly designed for realization an extremely compact digital sensor suited measure total sun UV...
In this paper, we propose a UV-A sensor based on 6H-SiC Schottky photodiode with thin Ni <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Si front electrode and an integrated hydrogenated silicon nitride (SiN:H) dielectric filter. prototypes were fabricated by using manufacturing process to large extent already implemented 4H-SiC poly-type for the realization of high signal-to-noise ratio ultraviolet (UV) commercialized. The results...
This paper reports on the effects of excimer laser irradiation an aluminum (Al)-doped silicon carbide (4H-SiC) layer. Specifically, high-concentration (1 × 1020 at/cm3) Al-implanted 4H-SiC samples were exposed to a few pulses 308 nm radiation (pulse duration 160 ns), with fluence varying from 1.0 2.8 J/cm2. As starting point, laser-induced modifications morphological, microstructural, and nanoelectrical properties surface monitored by combining different techniques. From these...
The formation of polycrystalline layers on flexible plastic substrates, through plasma enhanced chemical vapor deposition and excimer laser annealing, is investigated. Combining low-temperature annealing with dehydrogenation/crystallization produces good-quality silicon a reduced shot density. By using optimal crystallization conditions it possible to achieve superlateral growth regime, grain size up , void-free material, as confirmed by the presented structural analysis. beneficial effect...
The formation of ohmic contacts by laser annealing approach is great importance for SiC power devices, since it allows their fabrication on thin substrates, that crucial significance to reduce dissipation. Ni silicide reaction under UV irradiation has been studied in detail with particular focus single pulse approach, order describe the early stage process. use a multi silicide-based means excimer annealing, investigated this work. process characterized, as function number pulses, X-Ray...
New generations of SiC power devices require to be fabricated on very thin substrates, in order significantly reduce the series resistance device. The role thinning process formation backside ohmic contact has been investigated this work. Three different mechanical grinding processes have adopted, resulting amounts defectivity and surface roughness values. An excimer UV laser used form a Ni-silicide based wafers. reacted layer studied by means Atomic Force Microscopy (AFM), Transmission...
Exposure to ultraviolet (UV) radiation is a major risk factor for most skin cancers. The sun our primary natural source of UV radiation. strength the sun's expressed as Solar Index (UVI). UV-A (320–400 nm) and UV-B (290–320 rays mostly contribute UVI. typically destructive form because it has enough energy cause photochemical damage cellular DNA. Also overexposure rays, although these are less energetic than photons, been associated with toughening skin, suppression immune system, cataract...
We present a method for the simulation of kinetic evolution in sub µs timescale composite materials containing regions occupied by alloys, compounds, and mixtures belonging to Ni-Si-C ternary system. Pulsed laser irradiation (pulses order 100 ns) promotes this evolution. The approach is formulated framework phase-field theory it consists system coupled non-linear partial differential equations (PDEs), which considers as variables following fields: electro-magnetic field, temperature,...
Silicided Ni/Au contacts with very low contact resistance were realized on p-type [001] silicon at temperature by ex-situ or, alternatively, in situ annealing processes. During the annealing, performed 200 °C for 10 s, a uniformly thin (14 nm) Ni2Si layer was formed having an extremely flat interface thanks to trans-rotational structure of silicide. promoted sputter etch processing (T &lt; 300 °C), 44 nm-thick silicide as mixture NiSi and epitaxial NiSi2, domains. In both cases, using...
Abstract Nickel silicide is widely used to realize contact terminals of integrated circuits and usually formed by ex‐situ heating treatments. In‐situ reactions during sputter deposition a Ni layer onto HF p‐type [001] Si substrate have been investigated in this work, means transmission electron microscopy, X‐ray diffraction reflectivity analyses. A thin polycrystalline silicide, with extremely flat interfaces fiber texture the substrate, has obtained introducing etching step just before...
Laser annealing process for ohmic contact formation on 4H-SiC has attracted increasing attention in the last years, because it enables fabrication of SiC power devices very thin substrates. We have investigated Nickel-based by using a Yb:YAG laser scanning mode, with wavelength 515 nm and pulse duration 1200 ns. A 100 thick Ni layer been deposited irradiated at different conditions. The reaction studied, as function fluence scan number annealing, means X-Ray Diffraction (XRD) Transmission...
In this work, an investigation of the properties nanoscale-thick Ti/TiN, TiN, W, WN layers as diffusion barriers between Si and Al is carried out in view Si-based electronic applications. Heat treatments were performed on samples to activate interdiffusion Al. Changing annealing time temperature, each sample was morphologically characterized by scanning electron microscopy atomic force compositionally Rutherford backscattering analysis. The aim evaluate efficiency and, at same time, surface...
We report on a promising approach to realize bifacial silicon carbide (SiC) based ultraviolet (UV) photodetectors with no metallic electrodes. The ohmic contact regions, consisting of few conductive carbon-rich layers, while maintaining the necessary UV sensitivity for photodetector's operation, are directly realized using nanosecond-pulsed excimer laser. By combining structural, optical, and electrical characterization, we demonstrate how this treatment allows formation contacts, both front...
Silicon Carbide (SiC) provides the unique property of near-perfect visible blindness and very high signal-to-noise ratio due to quantum efficiency low dark current even at temperature. These features make SiC best available material for manufacturing blind semiconductor ultraviolet (UV) light detectors. Thanks their properties, detectors have been extensively used in fact flame detection monitoring, UV sterilization astronomy. Here we report on electrical optical performance patterned thin...
In this paper, we explore the effects of excimer laser irradiation on heavily Aluminum (Al)-implanted silicon carbide (4H-SiC) layer. 4H-SiC layers were exposed to UV-laser radiation (308 nm, 160 ns), at different fluences and exposure surface evaluated from morphological, micro-structural nano-electrical standpoints. Depending condition, significant near-surface changes observed. Moreover, electrical characteristics implanted layer, by means transmission line method, gave a sheet-resistance...