A5014975824- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Electron and X-Ray Spectroscopy Techniques
- Metal and Thin Film Mechanics
- Ion-surface interactions and analysis
- Diamond and Carbon-based Materials Research
- Silicon and Solar Cell Technologies
- Industrial Vision Systems and Defect Detection
- Copper Interconnects and Reliability
- Advancements in Photolithography Techniques
- Advanced Surface Polishing Techniques
- Semiconductor materials and interfaces
- Non-Invasive Vital Sign Monitoring
- Thin-Film Transistor Technologies
- Optical Imaging and Spectroscopy Techniques
- Gold and Silver Nanoparticles Synthesis and Applications
- Non-Destructive Testing Techniques
- Electronic and Structural Properties of Oxides
- Ga2O3 and related materials
- Phase-change materials and chalcogenides
- Metallurgy and Material Science
- ZnO doping and properties
- Fault Detection and Control Systems
- GaN-based semiconductor devices and materials
STMicroelectronics (Italy)
2014-2024
Swatch Group (Switzerland)
2024
Microelectronica (Romania)
2024
STMicroelectronics (Switzerland)
2007-2019
STMicroelectronics (Czechia)
2001-2008
Istituto Nazionale di Fisica Nucleare, Sezione di Lecce
2000-2004
University of Salento
2000-2004
We investigate defects in 4H-SiC p-n junction diodes introduced trough nanoindentation procedure. A load range between 3 mN and 15 was explored. Scanning Electron Microscopy Transmission analysis are adopted for the morphological crystallographic investigation of defects; electrical characterisations performed to conduction mechanism, both at RT versus measurement temperature. Electrical parameters such ideality factor, leakage current series resistance, extracted processed compared virgin...
We report on the structure and performance of 4H-SiC p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -n APDs fabricated in a fully planar technology. A dark current density lower than 10 nA/cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 30-V reverse bias breakdown voltage 88 V were observed. gain as high xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> was measured 94-V bias, confirming avalanche multiplication working...
Silicon photomultipliers (SiPMs) have been recently proposed for different applications in medical imaging area, inclunding functional near-infrared spectroscopy (fNIRS), due to their single photon sensitivity, fast timing response, low operation bias, compactness, and cost. Here, we report on the electro-optical performances of an SiPM technology suitably optimized continuous wave (CW)-fNIRS application through integration a (NIR) long-pass filter detector's package. The use considerably...
We report on the full process integration of nanocrystal (NC) memory cells in a stand-alone 16-Mb NOR Flash device. The Si NCs are deposited by chemical vapor deposition thin tunnel oxide, whose surface is treated with low thermal budget process, which increases NC density and minimizes oxide degradation. device fabrication has been obtained means conventional technology, integrated CMOS periphery high- low-voltage transistors charge pump capacitors. program erase threshold voltage...
There is an increasing interest to use silicon photomultipliers (SiPMs) in medical applications like Photoplethysmography or Functional Near Infrared Spectroscopy, allowing the monitoring of physiological signs through non-invasive equipment. The large area SiPMs with embedded color filters for environmental light rejection could bring relevant advantages these terms higher signal-to-noise ratio measurements. Here, we report on first electro-optical characterization results obtained n-on-p...
Silicon carbide (SiC) is an attractive material for power devices owing to the availability of high-quality epitaxial wafers and superior physical properties, such as its high breakdown electric field strength, electron mobility, low anisotropy. Ion implantation a key process both n- p-type selective doping SiC devices. A subsequent annealing in temperature range 1600- 1800°C required remove damage induced by electrically activate implanted dopants. The aim this work investigation effect...
We present excellent performance and reliability characteristics of a Silicon nanocrystal (Si-nc) 4 Mb NOR Flash array (90 nm technology node). Main original technological improvements are cylindrical symmetry the 1-Transistor bitcell, which significantly increases coupling ratio (particularly critical in Si-nc memories), use an optimized ONO control dielectric, prevents from parasitic charge trapping during cycling. Results shown here terms memory performance, high temperature reliability,...
Crystalline micrometer size stripes in 2.2 μm thick Ge2Sb2Te5 phase-change material films were produced by irradiation with a Continuous Wave Laser of 405 nm wavelength. The shape and the dimensions crystallized regions investigated Transmission Electron Microscopy then compared simulations based on temperature-crystal growth velocity literature data. temperature-time profile was determined taking into account laser power, optical thermal properties both amorphous crystalline phase....
We propose a Near Infra Red photon emitting 4H-SiC compact vertical pn diode. The "as fabricated" diode exhibits strong visible emission at 500 nm associated with the intrinsic and/or processing induced D1 centers in semiconductor. Thanks to opportune He <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> ion irradiation, we are able obtain color junction region responsible for around 900 while simultaneously quenching unwanted emission....
Among the transparent conductor, one of most interesting is Al doped Mg x Zn 1− O films for their electrical properties that make it very attracting solar cell application. In this work, distribution in was investigated order to find a reliable methods determine distribution. particular, X‐ray diffraction, Auger electron spectroscopy and time flight secondary ion mass spectrometry were used characterize film. Time MCs + results appear be promising analytical technique. Copyright © 2014 John...
Abstract Presentation slides for the ISTFA 2024 Tutorial session “AI-Driven Advancements in Image Processing, Analysis and 3D Modeling Fault Isolation Failure Analysis.”
Abstract In semiconductor manufacturing, the process of laser dicing can result in a loss yield due to defects associated interaction with sample. These be difficult identify, especially before proper tuning process. Traditional investigation methods, like infrared (IR) inspection and focused-ion beam scanning electron microscopy (FIB-SEM) analysis, are labor-intensive lack comprehensive insights. Here, we propose robust correlative (CM) workflow integrating IR, X-ray Microscopy (XRM),...
Abstract In the modern MOS‐based device poly‐silicon morphological and electrical properties play a very important role for final die performance. particular flash memory devices, due to continuous shrinkage, it is control relationship between process parameters layer characteristics. this paper we discuss influence of deposition pressure on deposited by LPCVD. We show that, in spite amorphous state as‐deposited layer, after crystallization, grain size, resistivity work function strongly...
Deposition of BPSG films as dielectrics is a critical step in semiconductor device manufacturing. Accurate control concentration depth profile Boron and Phosphorus important, because these variables determine the performance reliability dielectric film. In this study, method to characterize using TOF-SIMS shown. A failure analysis case study which characterization allows correlating Tungsten extrusion with non-uniform dopant distribution presented.
In this work, the use of unconventional reference materials to determine experimentally Cliff-Lorimer factor for EDS quantitative analysis with a TEM is checked by means an alternative experimental procedure. The k-factor determined extrapolation method based on pure elements, measuring normalized X-ray intensities emitted thin films gold and silver different thickness, accurately measured reflectivity. goal work confirm value previously obtained consisting bi-layer silver. current result in...