A5066161012- Thin-Film Transistor Technologies
- Silicon Carbide Semiconductor Technologies
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Photonic and Optical Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Nanowire Synthesis and Applications
- GaN-based semiconductor devices and materials
- Dark Matter and Cosmic Phenomena
- Chalcogenide Semiconductor Thin Films
- Phase-change materials and chalcogenides
- Ga2O3 and related materials
- Laser-induced spectroscopy and plasma
- Diamond and Carbon-based Materials Research
- Ion-surface interactions and analysis
- Radiation Detection and Scintillator Technologies
- Astrophysics and Cosmic Phenomena
- Optical Imaging and Spectroscopy Techniques
- Particle Detector Development and Performance
- Neutrino Physics Research
- Non-Invasive Vital Sign Monitoring
- Radiation Therapy and Dosimetry
- Laser Material Processing Techniques
- Nonlinear Optical Materials Studies
Institute for Microelectronics and Microsystems
2014-2024
Istituto Nazionale di Fisica Nucleare, Sezione di Catania
2005-2024
Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud
2024
National Research Council
2014-2020
University of Catania
2002-2015
University of Messina
2015
STMicroelectronics (Italy)
2015
Consorzio Roma Ricerche
2007-2008
In this letter, high responsivity 4H-SiC vertical Schottky UV photodiodes based on the pinch-off surface effect, obtained by means of self-aligned Ni2Si interdigit contacts, are demonstrated. The diode area was 1mm2, with a 37% directly exposed to radiation. dark current about 200pA at −50V. Under 256nm illumination, increase more than two orders magnitude is observed, resulting in 78% internal quantum efficiency. showed an ultraviolet-visible rejection ratio >7×103 and factor 1.8...
Ultraviolet light detection has a wide range of scientific and industrial applications. In particular, SiC photodiodes have been proposed because their robustness even in harsh environments, high quantum efficiency but excellent visible blindness, very low dark current, speed. Here, we report on the electrical optical performances efficient large area 4 H-SiC Schottky working photovoltaic regime. We demonstrate that signal-to-noise ratio along with operating reverse voltage spite sensitive...
Fabrication and electrical optical characterization of 4H-SiC Schottky UV photodetectors with nickel silicide interdigitated contacts is reported. Dark capacitance current measurements as a function applied voltage over the temperature range 20 °C - 120 are presented. The results show consistent performance among devices. Their leakage density, at highest investigated (120 °C), in nA/cm(2) high internal electric field. Properties such barrier height ideality factor also computed temperature....
Multi-walled carbon nanotubes (CNTs) decorated with zinc oxide nanoparticles (ZnO NPs) were prepared in isopropanol solution by a simple, room-temperature process and characterized from structural, morphological, electronic, optical points of view. A strong interaction between ZnO CNTs is fully confirmed all the characterization techniques. ZnO-CNTs nanocomposites, different weight ratios, deposited as dense layer two electrodes, order to investigate electrical behaviour. In particular,...
In this paper, we report on the performances of silicon photomultipliers (SiPMs) with commercial long-pass interferential and plastic filters integrated detector's package for environmental light rejection. Several applications, including functional near infrared (NIR) spectroscopy or detection ranging, would benefit from use highly sensitive detectors like SiPMs optimized electro-optical characteristics in NIR wavelength range. To purpose, it is fundamental to reduce absorption spurious...
We investigate defects in 4H-SiC p-n junction diodes introduced trough nanoindentation procedure. A load range between 3 mN and 15 was explored. Scanning Electron Microscopy Transmission analysis are adopted for the morphological crystallographic investigation of defects; electrical characterisations performed to conduction mechanism, both at RT versus measurement temperature. Electrical parameters such ideality factor, leakage current series resistance, extracted processed compared virgin...
Abstract The 11 B(p, α )2 reaction, generating three alpha particles, emerges as a promising alternative or complementary route for clean and efficient energy generation. A comprehensive understanding of reaction dynamics, distribution emitted optimization fusion efficiency requires precise diagnostic methods. CR39 detectors, being highly sensitive to ions neutrons while remaining transparent low fluxes electrons gammas, are extensively utilized primary Solid State Nuclear Track Detector...
We have fabricated and characterized a novel Si-based light modulator working at the standard communication wavelength of 1.5 μm. It consists three-terminal bipolar mode field effect transistor integrated with silicon rib waveguide on epitaxial Si wafers. The optical channel is embodied within its vertical electrical channel. Light modulation achieved moving plasma carriers inside outside by properly biasing control electrode. produce an increase absorption coefficient. devices been using...
Photodetection in the ultraviolet (UV) region has drawn extensive attention owing to its various applications industrial, environmental, and even biological fields. In this letter, we report on morphological electro-optical characteristics of continuous thin metal film Ni <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Si/4H-SiC photodiodes properly designed for realization an extremely compact digital sensor suited measure total sun UV...
Non-equilibrium plasma generated by nanosecond pulsed laser are characterized solid state 4H-SiC interdigit Schottky diodes and a large area ion collector detector, both connected in time-of-flight configuration. Plasma irradiation of different metallic targets through with 1010 W/cm2 intensity 200 mJ energy, where monitored. In this paper we demonstrate that the diode is able to detect ultraviolet radiation soft X-rays, energy order 20 eV very short rise time, few nanoseconds, high...
This paper reports the electrooptical characteristics of ultraviolet light-sensitive 4H-SiC p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -n junction photodiodes obtained by aluminium (Al) ion implantation on low-doped n-type epilayers. A low dark current density (<; 1 nA/cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at -100 V) was measured 1-mm area devices up to 90 °C. peak responsivity 0.11 A/W 280 nm corresponding a...
Visible blind 4H-SiC UV detectors were investigated with respect to radiation hardness since they can find applications in the aerospace field. Effects of ion irradiation on their response studied by monitoring spectral as a function beam energy and dose. The devices irradiated 1, 4, 10MeV Si+-ion show change depending energy. unexpected huge optical effect, compared negligible influence reverse bias leakage current, was correlated nature induced damage its location inside active device layer.
The physical properties of CaCu3Ti4O12 (CCTO) thin films grown by metal organic chemical vapor deposition on LaAlO3 substrates have been investigated. structural, compositional, and optical characteristics evaluated, all the collected data demonstrated that in obtained (001) epitaxial CCTO films, a low defect density is present. electrical behavior deposited has studied from both micro- nanoscopic points view compared with reported literature. measurements large area capacitors indicated...
The use of healthcare sensors in portable and wearable devices has drawn increasing attention the last few months. More particularly, integration ultraviolet (UV) light to monitor UV sunlight radiation next generation smartphones been widely discussed recently. Here, we propose 4H-SiC Schottky photodiodes with three different geometries suitably designed operate photovoltaic condition for monitoring. electrical optical characteristics these are investigated as a function bias temperature...
In this paper, we propose a UV-A sensor based on 6H-SiC Schottky photodiode with thin Ni <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Si front electrode and an integrated hydrogenated silicon nitride (SiN:H) dielectric filter. prototypes were fabricated by using manufacturing process to large extent already implemented 4H-SiC poly-type for the realization of high signal-to-noise ratio ultraviolet (UV) commercialized. The results...
Current research in High Energy Cosmic Ray Physics touches on fundamental questions regarding the origin of cosmic rays, their composition, acceleration mechanisms, and production. Unambiguous measurements energy spectra composition rays at "knee" region could provide some answers to above questions. So far only ground based observations, which rely sophisticated models describing high interactions earth's atmosphere, have been possible due extremely low particle rates these energies. A...
In this study, we deposit a Ge-rich Ge–Sb–Te alloy by physical vapor deposition (PVD) in the amorphous phase on silicon substrates. We study in-situ, X-ray and ultraviolet photoemission spectroscopies (XPS UPS), electronic properties carefully ascertain composition to be GST 29 20 28. Subsequently, Raman spectroscopy is employed corroborate results from study. diffraction used upon annealing crystallization of such an identify effects separation segregation crystalline Ge with formation...
A large photocurrent increase in 4H-SiC interdigit Schottky UV detectors was observed the presence of a thermally grown silicon oxide layer. In particular, internal quantum efficiency higher than unity indicated an gain strictly correlated with superficial on SiC. Moreover, long recovery time, range 10–19s, evaluated by fall-time measurements due to detrapping charges after irradiation switching off. The photoresponse device analytically described considering lowering surface potential...
We demonstrated a 4H-SiC vertical Schottky diode for betavoltaic application using interdigit front metallization. A relevant increase in the short-circuit current with respect to device continuous standard electrode was achieved this novel layout allowing collect also low-energy electrons. In particular, by irradiating monochromatic electron beam (e-beam) of 17 keV, an internal gain that is 1.4 times higher than conventional devices obtained. An open-circuit voltage ~1 V obtained...
The capacitance plays a key role in determining the timing performances of detector. To date, this parameter has never been fully investigated study SiC photodiodes electro-optical characteristics. In paper, we report on dependence interdigitated 4H-SiC Schottky different operating parameters like reverse bias, temperature, light irradiance and illumination wavelength.
We investigated optical, structural, and chemical properties of SiOxNy layers irradiated by CW IR laser during a time lapse few milliseconds. observed tunable photoluminescence signal at room temperature in the range 750–950 nm, without Si/SiO2 phase separation, depending on power irradiation. Furthermore, no was recorded when density high enough to promote separation forming Si quantum dots. By analysis source luminescence has been identified change silicon environment induced annealing...
We report on the structure and performance of 4H-SiC p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -n APDs fabricated in a fully planar technology. A dark current density lower than 10 nA/cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 30-V reverse bias breakdown voltage 88 V were observed. gain as high xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> was measured 94-V bias, confirming avalanche multiplication working...