A5025756515- Heat Transfer and Optimization
- Advanced Memory and Neural Computing
- Heat Transfer and Boiling Studies
- Ferroelectric and Negative Capacitance Devices
- Perovskite Materials and Applications
- Neural Networks and Reservoir Computing
- Transition Metal Oxide Nanomaterials
- Silicon Carbide Semiconductor Technologies
- Heat Transfer Mechanisms
- Thin-Film Transistor Technologies
- Ga2O3 and related materials
- Multiferroics and related materials
- 3D IC and TSV technologies
- Neuroscience and Neural Engineering
- Ferroelectric and Piezoelectric Materials
- X-ray Diffraction in Crystallography
- Gas Sensing Nanomaterials and Sensors
- Thermal properties of materials
- ZnO doping and properties
- Crystallization and Solubility Studies
- Electronic and Structural Properties of Oxides
- 2D Materials and Applications
- Microwave-Assisted Synthesis and Applications
- Nanopore and Nanochannel Transport Studies
- Semiconductor materials and devices
Peking University
2021-2025
Chinese Academy of Sciences
2016-2024
National Laboratory for Superconductivity
2017-2024
Institute of Physics
2016-2024
Tianjin University of Technology
2022-2023
Beijing Advanced Sciences and Innovation Center
2023
China University of Geosciences (Beijing)
2016-2022
Institute of Microelectronics
2021-2022
University of Chinese Academy of Sciences
2020-2021
Jiangsu Normal University
2017-2021
Considering that the human brain uses ≈10
Neuromorphic computing consisting of artificial synapses and neural network algorithms provides a promising approach for overcoming the inherent limitations current architecture. Developments in electronic devices that can accurately mimic synaptic plasticity biological synapses, have promoted research boom neuromorphic computing. It is reported robust ferroelectric tunnel junctions be employed to design high-performance synapses. These show an excellent memristor function with many...
Abstract Hardware implementation of artificial synaptic devices that emulate the functions biological synapses is inspired by neuromorphic system and has drawn considerable interest. Here, a three‐terminal ferrite device based on topotactic phase transition between crystalline phases presented. The electrolyte‐gating‐controlled transformation brownmillerite SrFeO 2.5 perovskite 3− δ confirmed from examination crystal electronic structure. A transistor with electrolyte‐gated films harnessing...
Abstract Artificial synaptic devices are the essential hardware of neuromorphic computing systems, which can simultaneously perform signal processing and information storage between two neighboring artificial neurons. Emerging electrolyte‐gated transistors have attracted much attention for efficient emulation by using an addition gate terminal. Here, device based on SrCoO x (SCO) films is proposed. It demonstrated that reversible modulation SCO phase transforms brownmillerite 2.5 perovskite...
Ultraviolet photodetectors have attracted considerable interest for a variety of applications in health, industry, and science areas. Self-driven visible-blind represent an appealing type sensor, due to the reduced size high flexibility. In this work, we employed BaTiO3 (BTO) single crystals with bandgap 3.2 eV realization self-driven ultraviolet detector, by utilizing ferroelectric properties BTO. We found that sign photocurrent can be reversed flipping polarization, which makes...
We investigated a high-performance deep ultraviolet photodetector based on β-gallium oxide (β-Ga2O3) nanowire network. β-Ga2O3 nanowires were grown at different temperatures by chemical vapor deposition method. X-ray diffraction, scanning electron microscopy, transmission microscopy and energy dispersive spectrum analysis utilized to characterize the structure morphology. With increasing temperature, became thicker their surface appeared more rough with many kinks branch-like shapes. It is...
Abstract Neuromorphic computers, which can store information and compute at the same time, have been considered to be a potential candidate for greatly improving computing efficiency. The development of high‐performance artificial synapses, are basic unit brain‐like chips, is very important realizing efficient neuromorphic computing. Here, dual‐gated MoS 2 transistor designed realize synaptic functions programmable logic operations. channel conductance modulated via top electrolyte gating...
High-performance artificial synaptic devices with rich functions are highly desired for the development of an advanced brain-like neuromorphic system. Here, we prepare based on a CVD-grown WSe2 flake, which has unusual morphology nested triangles. The transistor exhibits robust behaviors such as excitatory postsynaptic current, paired-pulse facilitation, short-time plasticity, and long-time plasticity. Furthermore, due to its high sensitivity light illumination, excellent...
This paper presents a novel Ku-band parasitic patch antenna based on MEMS technology. The consists of two substrates that are bonded together. lower substrate houses the main and ground layer, while upper supports patch. To minimize dielectric loss, is fabricated using double-layer suspended film process, combining parylene C Spin-on-glass (SOG) materials. also SOG. proposed achieves measured bandwidth 30% (11.1~15.01 GHz), peak gain 8.57 dBi, compact size 0.87 × 0.09 λ03.
The defect chemistry of perovskite oxides involves the cause to most their abundant functional properties, including interface magnetism, charge transport, ionic exchange, and catalytic activity. possibility achieve dynamic control over oxygen anion vacancies offers a unique opportunity for development appealing switchable devices, which at present are commonly based on ferroelectric materials. Herein, we report discovery photovoltaic effect, that sign open voltage short circuit current can...
We report the discovery of a new line defect, and modification electronic structures in strain engineered WO<sub>3</sub> films.
A new catalytic difluorohydration of β-alkynyl ketones using NFSI as the fluorinating reagent has been established, diastereoselectively providing difluoride 1,5-dicarbonyl products, and some them were converted into difluorinated isoquinolines.
SnSe2 field-effect transistor was fabricated based on exfoliated few-layered flake, and its electrical photoelectric properties have been investigated in detail. With the help of a drop de-ionized (DI) water, FET can achieve an on/off ratio as high ~ 104 within 1 V bias, which is ever extremely difficult for due to ultrahigh carrier density (1018/cm3). Moreover, subthreshold swing mobility are both improved ∼ 62 mV/decade 127 cm2 V−1 s−1 at 300 K, results from efficient screening by liquid...
The further development of traditional von Neumann-architecture computers is limited by the breaking Moore’s law and Neumann bottleneck, which make them unsuitable for future high-performance artificial intelligence (AI) systems. Therefore, new computing paradigms are desperately needed. Inspired human brain, neuromorphic proposed to realize AI while reducing power consumption. As one basic hardware units computing, synapses have recently aroused worldwide research interests. Among various...
Abstract The data throughput in the von Neumann architecture-based computing system is limited by its separated processing and memory structure, mismatching speed between two units. As a result, it quite difficult to improve energy efficiency conventional system, especially for dealing with unstructured data. Meanwhile, artificial intelligence robotics nowadays still behave poorly autonomy, creativity, sociality, which has been considered as unimaginable computational requirement...
A solar-blind ultraviolet photodetector based on perovskite (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 (LSAT) single crystal has been fabricated. The Deep Ultra Violet (DUV)/Ultra (UV) (200 versus 290 nm) ratio is more than three orders of magnitude under the applied bias voltage 200 V. Under illumination at nm, responsivity this reaches 4 mA/W V bias. corresponding quantum efficiency and detectivity are 2.76% 1×1011 cm⋅Hz0.5/W, respectively. ultrafast response with a rise time 563 ps full width half...
Embedded silicon fan-out packaging (eSiFO) features excellent electrical and thermal performances as well scalability to 3-D heterogeneous integration, making it a promising technology for chiplet integration. Nevertheless, conventional eSiFO implementation resorts dry film vacuum lamination process surface passivation of reconstituted wafers, which is challenged by low lithographic resolution, limited compatibility, difficulty in filling high-aspect trenches, elevated costs due the inherent...
b ( a 南通大学化学化工学院 江苏南通 226019) 江苏师范大学化学与材料科学学院 江苏徐州 221116)
Driven by the wider application of new generation wide-bandgap materials, thermal management for high power electronic devices is becoming a growing concern. Microfluidic cooling technology considered promising to overcome challenge because it allows more efficient heat dissipation due powerful convection liquid. In this paper, employing numerical study, hybrid discontinuous microchannel sink combining manifold with pin fins (DMC-MPF) proposed. Compared traditional design, DMC-MPF enhances...