A5055480154- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Organic Light-Emitting Diodes Research
- Organic Electronics and Photovoltaics
- Conducting polymers and applications
- Integrated Circuits and Semiconductor Failure Analysis
- 3D IC and TSV technologies
- CCD and CMOS Imaging Sensors
- Nanofabrication and Lithography Techniques
- Image and Video Quality Assessment
- Photonic and Optical Devices
- Electrical and Thermal Properties of Materials
- Nanowire Synthesis and Applications
- Modular Robots and Swarm Intelligence
- ZnO doping and properties
- Ferroelectric and Negative Capacitance Devices
- Copper Interconnects and Reliability
- Advanced Memory and Neural Computing
- Radio Frequency Integrated Circuit Design
- Advanced Sensor and Energy Harvesting Materials
- GaN-based semiconductor devices and materials
- Silicon and Solar Cell Technologies
National Cheng Kung University
2020-2024
IMEC
2024
Taiwan Semiconductor Manufacturing Company (Taiwan)
2022
Southern Taiwan Science Park
2014
PayPal (United States)
2014
National Tsing Hua University
2011
National Yang Ming Chiao Tung University
2011
Nitrogen-bridged donor–acceptor multifused dithienopyrrolobenzothiadiazole (DTPBT) and dibenzothiadiazolopyrrolothiophene (DBTPT) were successfully synthesized by intramolecular Cadogan annulation. The electron-deficient benzothiadiazole unit in DTPBT can be converted to benzoselenadiazole quinoxaline moieties through reduction/cyclization generate dithienopyrrolobenzoselenadiazole (DTPBSe) dithienopyrroloquinoxaline (DTPQX), respectively. nitrogen atoms function as the bridges for covalent...
Conjugated oligomers with various ratios of cyclopentadithiophene (CPDT) to benzothiadiazole (BT) repeating units are reported. These can be polymerised high molecular weight polymers (Mn > 100k) by oxidative polymerisation using iron(III)chloride. The electronic properties these materials were examined cyclic voltammetry and UV-vis spectroscopy the results compared those calculated density functional theory (DFT). Polymers optimum CPDT : BT (2 1) show hole mobilities in excess 10−2 cm2 V−1...
Advancing the state-of-the-art 16nm technology reported last year, an enhanced CMOS featuring second generation FinFET transistors and advanced Cu/low-k interconnect is presented. Core devices are re-optimized to provide additional 15% speed boost or 30% power reduction. Device overdrive capability also extended by 70mV through reliability enhancement. Superior 128Mb High Density (HD) SRAM Vccmin of 450mV achieved with variability reduction for first time. Metal capacitance ∼9% realized...
In this study, conventional CMOS and complementary field-effect transistor (CFET) inverters based on a vertically stacked-nanosheet (NS) structure were fabricated. The NS below 8-nm channel layer thickness (TSi) was obtained by dry etching wet processes. is controlled etching, the width shrunk down etching. Compared to single nanowire transistors (NSFETs), stacked NSFETs exhibit higher ON-current performance. For inverter, voltage transfer characteristics (VTCs) could be matched much better...
In this article, heterogeneous complementary field-effect-transistor (CFET) constructed by vertically stacking amorphous indium gallium zinc oxide (a-IGZO) n-channel on poly-Si p-channel with their own dielectric layer and work function metal gate inverters were demonstrated. Meanwhile, high-frequency IGZO radio frequency (RF) devices as guard ring material simultaneously fabricated in the same process. High <inline-formula> <tex-math notation="LaTeX">${f}_{\text {T}}$...
Amorphous indium gallium zinc oxide (a-IGZO) has recently made significant advancement as a key material for electronic component design owing to its compatibility with complementary metal semiconductor technologies. A comprehensive analysis of reliability-related issues is required determine the true potential a-IGZO-based devices next-generation electronics applications. To address this objective, we electrically characterize scaled-channel a-IGZO thin film transistors (TFTs) under...
Recently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. A systematic electrical characterization TFT related to reliability issues, such as positive bias temperature stress (PBTS) negative (NBTS), would entitle integration into novel Unexpectedly, PBTS is characterized by transition Vth shift (ΔVth, followed activated shift). This attributed charge...
Amorphous indium gallium zinc oxide (a-IGZO)-based thin film transistors (TFTs) are increasingly becoming popular because of their potential in futuristic applications, including CMOS technology. Given the demand for CMOS-compatible, ultra-scaled, reliable, and high-performing devices, we fabricate analyze scaled-channel a-IGZO-TFTs with an optimal double-gate structure, a nanosheet-based channel, effective high-κ dielectric namely HfO2. The reliably reported double gate IGZO nanosheet TFTs...
Monolithic 3D stacking of complementary FET (CFET) SRAM arrays increases integration density multi-fold while supporting the inherent advantages low write power and near-infinite endurance. We propose multiple 8-transistor CFET-SRAM layers on regular CMOS periphery to achieve an ultra-high-density array for computing-in-memory (CIM). CFET (FinFET) devices are measured calibrated with BSIM-CMG compact model. SPICE simulations performed evaluate delay CIM operation, consumption, analog...
Zinc oxide (ZnO) is an amorphous semiconductor (AOS) material valued for its high carrier mobility, transparency to visible light, and low-temperature manufacturing process compared silicon-based semiconductors. These desired features make ZnO-based AOSs widely popular as the channel layer in TFTs key dielectric layers electronic devices like light sensors, gas detectors, resistive random-access memory (RRAM), more. Among them, Conductive Bridge Random Access Memory (CBRAM) with a switching...
This study proposes a logic non-volatile memory (NVM) device based on the state-of-the-art gate-all-around (GAA) nanosheet process. By adopting complementary FET structure, we not only reduce layout footprint area but also demonstrate compatibility with sub-3nm CMOS technology. We simulated in TCAD for program and erase operations, considering both Fowler Nordheim tunneling hot carrier injection mechanisms. The window is optimized by adjusting such as blocking oxide thicknesses, top-...
Monolithic 3D-IC is one of the solutions to relieve Moore’s law with vertically integrating circuits for sub-1nm technology nodes. Therefore, thin-film transistors (TFTs) play an important role in this trend because their low fabrication temperature realize back-end circuits. On other hand, 3D filter, duplexer, switch, and so on necessary as antennas array requirements increase 5G or beyond. Consequently, it foreseeable adopt TFTs implement radio frequency (RF) devices. Fig. 1 shows...