A5101471744- Particle Detector Development and Performance
- Radiation Detection and Scintillator Technologies
- Particle physics theoretical and experimental studies
- Nuclear Physics and Applications
- Muon and positron interactions and applications
- Dark Matter and Cosmic Phenomena
- Medical Imaging Techniques and Applications
- Particle accelerators and beam dynamics
- Atomic and Subatomic Physics Research
- Neutrino Physics Research
- Semiconductor materials and devices
- Quantum Chromodynamics and Particle Interactions
- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- Silicon Carbide Semiconductor Technologies
- Astrophysics and Cosmic Phenomena
- Particle Accelerators and Free-Electron Lasers
- Superconducting Materials and Applications
- High-Energy Particle Collisions Research
- Advancements in Semiconductor Devices and Circuit Design
- CCD and CMOS Imaging Sensors
- Image and Object Detection Techniques
- Nuclear physics research studies
- Gyrotron and Vacuum Electronics Research
- GaN-based semiconductor devices and materials
Osaka University
2020-2025
Keio University
2024
Toneyama National Hospital
2023-2024
The University of Tokyo
2010-2024
Fuji Electric (Japan)
1995-2023
High Energy Accelerator Research Organization
2014-2023
Kyushu University
1984-2023
Yamagata University
2023
Nippon Soken (Japan)
2012-2023
The Graduate University for Advanced Studies, SOKENDAI
2023
This paper introduces a new approach to measure the muon magnetic moment anomaly |$a_{\mu} = (g-2)/2$| and electric dipole (EDM) |$d_{\mu}$| at J-PARC facility. The goal of our experiment is |$a_{\mu}$| using an independent method with factor 10 lower momentum, 20 smaller diameter storage-ring solenoid compared previous ongoing |$g-2$| experiments unprecedented quality storage field. Additional significant differences from present experimental include 1000 transverse emittance beam...
The nonradiative lifetime (τNR) of the near-band-edge emission in various quality GaN samples is compared with results positron annihilation measurement, order to identify origin and determine capture-cross-section major intrinsic recombination centers (NRCs). room-temperature τNR n-type increased decreasing concentration divacancies composed a Ga vacancy (VGa) N (VN), namely, VGaVN. value also increasing diffusion length positrons, which almost proportional inverse third root gross all...
Complementary time-resolved photoluminescence and positron annihilation measurements were carried out at room temperature on Mg-doped p-type GaN homoepitaxial films for identifying the origin estimating electron capture-cross-section (σn) of major nonradiative recombination centers (NRCs). To eliminate any influence by threading dislocations, free-standing substrates used. In GaN, defect complexes composed a Ga-vacancy (VGa) multiple N-vacancies (VNs), namely, VGa(VN)2 [or even VGa(VN)3],...
Emission of muonium (|$\mu ^+e^-$|) atoms from a laser-processed aerogel surface into vacuum was studied for the first time. Laser ablation used to create hole-like regions with diameter about 270 |$\mu $|m in triangular pattern hole separation range 300–500 $|m. The emission probability sample is at least eight times higher than uniform one.
Abstract We have developed an optical photon-counting imaging system, IMONY, as instrument for short-scale time-domain astronomy. In this study, we utilized a Geiger avalanche photodiode array with $4\times 4$ pixel configuration, each measuring 100 µm. dedicated analog frontend board and constructed data acquisition system FPGA to time-stamp photon time resolution of ns. mounted prototype model the on 1.5 m Kanata telescope, intending observe Crab pulsar conduct joint observations Iitate...
This paper examines for the first time possibility of Super Junction (SJ) concept to realise lateral device structures on SOI with high breakdown voltage and low on-resistance use in power integrated circuits (PICs). More specifically, a novel structure based an unbalanced SJ (USJ) configuration is proposed investigated using 3D-device simulator, DAVINCI. The physics related described detail shown rely truly three dimensional RESURF effect achieve blocking capability-hence acronym 3D-RESURF....
A high performance vertical 600 V–50 IGBT with reverse blocking capability (RB-IGBT) has been developed for the first time. Ultra-thin wafer technology combined a deep boron diffusion technique results in great improvement on trade-off performance. Two RB-IGBTs connected anti-parallel form bi-directional switch. These switches are necessary to implement efficiency matrix converter.
We observed diffuse cosmic and atmospheric gamma rays at balloon altitudes with the Sub-MeV gamma-ray Imaging Loaded-on-balloon Experiment I (SMILE-I) as first step toward a future all-sky survey high sensitivity. SMILE-I employed an electron-tracking Compton camera comprised of gaseous electron tracker Compton-scattering target scintillation absorber. The carrying detector was launched from Sanriku Balloon Center Institute Space Astronautical Science/Japan Aerospace Exploration Agency on...
Photon imaging for MeV gammas has serious difficulties due to huge backgrounds and unclearness in images, which are originated from incompleteness determining the physical parameters of Compton scattering detection, e.g., lack directional information recoil electrons. The recent major mission/instrument band, Gamma Ray Observatory/COMPTEL, was Camera (CC), detected mere $\sim30$ persistent sources. It is stark contrast with $\sim$2000 sources GeV band. Here we report performance an...
A vertical 600 V-50 IGBT with reverse blocking capability is developed for the first time. Our measurement shows up to 900 V. This can be used as a bi-directional in combination another IGBT. Bi-directional IGBTs realize low-loss AC-AC direct conversion circuit. There great possibility improve performance of by utilizing FZ-NPT-IGBT structure.
We developed a three-dimensional gaseous tracking device and performed direction-sensitive dark matter search in surface laboratory. By using 150 Torr carbon-tetrafluoride (CF_4 gas), we obtained sky map drawn with the recoil directions of carbon fluorine nuclei, set first limit on spin-dependent WIMP (Weakly Interacting Massive Particles)-proton cross section by method. Thus, showed that WIMP-search experiment can actually limits. Furthermore, demonstrated this method will potentially play...
To accelerate the development of GaN power devices, reproducible fabrication p-type (p-GaN) segments by ion-implantation (I/I) that enables selective-area doping is preferred. In this Letter, results time-resolved photoluminescence (PL) and spatially resolved cathodoluminescence (CL) measurements on p-GaN fabricated I/I are presented. The samples a 220-nm-deep box-shaped Mg concentration profile ([Mg] = 3×1018 cm−3) were sequential N followed atmospheric-pressure post-implantation annealing...
The H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> cleaning technique was examined as the precleaning of gate oxidation for 4H-SiC MOSFETs. device had a channel width and length 150 100 μm, fabricated on p-type epitaxial layer 3×10/sup 16/ cm/sup -3/. performed after conventional RCA cleaning, annealing at 1000/spl deg/C. obtained mobility depends pre-cleaning process strongly, achieved 20 cm <sup...
Motion is an essential feature of living systems. Microorganisms autonomously change their nature in response to slight changes the surrounding environment induced by external stimuli and exhibit unique motion modes. Various self-propelled objects have been constructed understand these behaviors. Towards achievement such purpose, precise settings experimental conditions including fabrication with a shape anisotropy made attempts field active matter supramolecular chemistry. This review...
In this report, we propose the guard-ring structure as edge termination for high-voltage SiC Schottky barrier diodes. The local oxidation process is used to form mesa of a p-n junction guard-ring. comparison between Al/Ti diodes with and without indicates effectiveness relax electric field, from results that breakdown voltage about two times larger high yield.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>