Spin-transfer torque magnetic tunnel junction (MTJ) is a promising candidate for nonvolatile memories thanks to its high speed, low power, infinite endurance, and easy integration with CMOS circuits. However, relatively current flowing through an MTJ always required by most of the switching mechanisms, which results in electric field significant self-heating effect. This may lead dielectric breakdown ultrathin (~1 nm) oxide barrier cause functional errors hybrid CMOS/MTJ paper analyzes...

In the upcoming internet of things (IoT) era, spin transfer torque magnetic tunnel junction (STT-MTJ) based non-volatile (NV) memory and circuits for IoT nodes normally-off electronics will need to meet constraints in speed, energy robustness. This study focuses on NV logic-in-memory (LIM) architecture. Supply voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dd</sub> ) scaling MTJ NV-LIM is evaluated FD-SOI 28 nm node. order overcome V...

Recently, experimental results have demonstrated that perpendicular magnetic tunnel junction (p-MTJ) with the antiferromagnetic(AFM)/ferromagnetic (FM)/oxide structure can achieve field-free spin-orbit torque (SOT) switching since AFM metal strip not only generate SOT, but also provide an exchange bias (HEX), making it suitable for practical applications. However, owing to HEX is weak, such SOT incomplete, thus resulting in severe reliability. In addition, a large current (ISOT) required,...

A large number of solutions have been proposed to support mobility in IP networks including original Mobile IP, its derivatives and several newly protocols. However, these drawbacks different aspects triangle routing, handover inefficiency, heavy signaling overhead, etc. In this paper, we argue that problems can be addressed based on Software Defined Networks (SDN). We discuss why SDN helps solve the current protocols give our algorithms demonstrate how are solved. also present an...

The Internet of Things (IoTs) relies on efficient node memories to process data among sensors, cloud and RF front-end. Both mainstream emerging have been developed achieve this energy efficiency target. Spin transfer torque magnetic tunnel junction (STT-MTJ)-based nonvolatile memory (NVM) has demonstrated great performance in terms zero standby power, switching power efficiency, infinite endurance high density. However, it still a big gap; e.g., dynamic write energy, large latency, yield...

Using potentiometric testing, we investigated the zeta potential of shield muck curing materials' particle surfaces, varying concentration metal ion complex. We analyzed microscopic characteristics products by using electron microscopy, revealing impact complex on curing. Results showed that significantly reduces surface and conventional materials, with cement showing most substantial effect, followed muck, calcium carbonate, sulfate. The negatively correlates within a range 0 to 100 mmol/L....

In this paper, we present a reconfigurable Physically Unclonable Functions (PUF) based on the Spin-Orbit-Torque Magnetic Random-Access Memory (SOT-MRAM), which exploits thermal noise as true dynamic entropy source. Therefore, MRAM cells could be configured to random final states with stochastic switching mechanism. The proposed PUF is constructed and reconfigured by combining small-capacity number generator (TRNG) high-reliability secure hash algorithm (SHA-512), realizing transformation...

A novel low-power nonvolatile magnetic flip-flop is introduced in this paper. The perpendicular anisotropy spin torque transfer tunnel junction (STT-MTJ) used to design the hybrid MTJ/CMOS circuit, which implemented with 28-nm high-κ metal gate and planar ultrathin body buried oxide fully depleted silicon on insulator technology. proposed structure named SA-MFF shares a sensing amplifier for normal mode data mode. modified latch at output stage improves latency. symmetrical, provides an...

Spintronic devices, such as magnetic tunnel junction (MTJ), are under intense investigation to overcome the increasing power issues of modern computing system, especially technology node scales below 45 nm. MTJ is one most promising candidates for next generation memory and logic chips thanks its non-volatility, fast access speed, high endurance easy 3-D integration with CMOS technology. In order build a high-performance processor, this paper proposes new design full-adder (MFA) whose input...

Laser powder bed fusion (LPBF) is a promising additive manufacturing technology for producing metal parts with complex geometric features. However, the issue concerning process stability and repeatability still hinders its future acceptance by industry. Gaining better understanding of behavior evaporation an important step towards further insights into interaction between laser material. In this study, we used off-axis high-speed camera to observe vapor plume evolution in single-track...

This brief presents a parallel magnetoresistive random access memory (MRAM)-based strong physical unclonable function (MPUF). The proposed MPUF leverages fabrication-induced process variations of magnetic tunnel junction (MTJ) and compares the resistance MRAM cells to obtain 1-bit response value. Contrary arbiter PUF, achieves maximum security by satisfying strict avalanche criterion (SAC) property, its secrecy capacity increases linearly with CRPs. Moreover, an array selection circuit (ASC)...

Stochastic Computing (SC) with random bit streams has been used to replace binary radix encoding. SC-based logic cicuits take advantage of area minimization, fast and accurate operation inherent fault tolerance. In this paper, the stochastic characteristics in Spin Torque Transfer Magnetic Tunnel Junction (STT-MTJ) bring on an innovative number generator (SNM) circuit. The hybrid MOS-MTJ process allows design a 4T1M structure SNM 1.98μm∗1.46μm layout area, using 28 nm ultra thin body buried...

In this paper, we proposal an content provider mobility solution of Named Data Networking (NDN) [1]. Here means the host NDN network which provide originally. We add a Locator are to Interest packet [2]. Mapping System also introduced into network, maps identifier locator. The original name is used as identifier. Thus, matching lookup in Content Store (CS) and Pending Table (PIT) employs identifier, while forwarding Forwarding Information Base (FIB) reality, should be DNS-like distributed...

This article proposes two different magnetic nonvolatile-static random access memory (MNV-SRAM) cell circuits for low-power, high-speed, and high-reliable backup operation with a compact area. They employ perpendicular tunnel junctions (p-MTJs) as nonvolatile storage elements explore the spin-orbit torque (SOT) assistance of voltage-controlled anisotropy effect (VCMA), referred to voltage-gated SOT (VGSOT), perform operation. By using an antiferromagnetic (AFM) layer that provides both...

Recently, many attention-based deep neural networks have emerged and achieved state-of-the-art performance in environmental sound classification. The essence of attention mechanism is assigning contribution weights on different parts features, namely channels, spectral or spatial contents, temporal frames. In this paper, we propose an effective convolutional network structure with a multichannel (MCTA) block, which applies within each channel the embedded features to extract channel-wise...

Emerging memories have been developed to achieve energy efficiency target in the Internet of Things era. Spin transfer torque magnetic tunnel junction (STT-MTJ)-based nonvolatile (NV) memory has demonstrated attractive performance because zero standby power, reduced switching infinite endurance, and high density. Meanwhile, hybrid STT-MTJ/CMOS integration is a promising solution overcome bottleneck dynamic leakage power dissipation. In this paper, ultralow methodologies are at device circuit...

In the conventional Von-Neumann computer architecture, more energy and time are consumed by data transport, rather than computation itself because of limited bandwidth between processor memory. Computing-in-memory (CIM) is therefore proposed to effectively address issue moving some specified kinds into It has been for several decades, however, not really used when considering reliability cost. With emergence non-volatile memories, CIM regained interest tackle issue. this paper, we implement...

The planar ultrathin body and buried oxide fully depleted silicon-on-insulator (FDSOI) technology is one of the proper candidates to replace bulk CMOS due its high volume, low cost, lower power. In this paper, we investigate performance hybrid magnetic-MOS non-volatile (NV) magnetic flip-flops (MFFs) in FDSOI technology. NV-MFF parameters, e.g., active power, leakage sensing delay, are optimized with selected design vectors: supply voltage (V <sub...