A5014107191- Semiconductor Quantum Structures and Devices
- Organic Electronics and Photovoltaics
- Photonic and Optical Devices
- ZnO doping and properties
- Semiconductor materials and devices
- Copper-based nanomaterials and applications
- Thin-Film Transistor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Photonic Crystals and Applications
- Force Microscopy Techniques and Applications
- Neuroscience and Neural Engineering
- Semiconductor materials and interfaces
- Advanced Memory and Neural Computing
- Silicon Nanostructures and Photoluminescence
- GaN-based semiconductor devices and materials
- Advanced Semiconductor Detectors and Materials
- Nanofabrication and Lithography Techniques
- Quantum and electron transport phenomena
- Ion-surface interactions and analysis
- Optical Coatings and Gratings
- Molecular Junctions and Nanostructures
- Advancements in Photolithography Techniques
- Advanced Surface Polishing Techniques
- Nanowire Synthesis and Applications
- Gas Sensing Nanomaterials and Sensors
Slovak Centre of Scientific and Technical Information
2024
International Laser Center
2008-2020
Slovak University of Technology in Bratislava
2002-2020
Vorarlberg University of Applied Sciences
2020
Sylex (Slovakia)
2020
Centre National de la Recherche Scientifique
2019
Université de Technologie de Compiègne
2019
Comenius University Bratislava
2018
Wuhan University
2018
Jiwaji University
2018
We report on the fabrication and characterization of parylene C thin layers for organic electronic devices passivation gate dielectric field effect transistors (OFETs) development. The investigated were deposited from vapour phase in thickness ranging 3 to 800 nm at room temperature. surface morphology characterized by ellipsometry AFM technique. quality structures analysed X-ray reflectivity diffraction as well micro-Raman spectroscopy. measurements confirmed perfect homogeneity structural...
Minimizing the foreign body reaction to polyimide-based implanted devices plays a pivotal role in several biomedical applications. In this work, we propose materials exhibiting nonbiofouling properties and Young's modulus reflecting that of soft human tissues. We describe synthesis, characterization, vitro validation poly(carboxybetaine) hydrogel coatings covalently attached polyimide substrates via photolabile 4-azidophenyl group, incorporated chains at two concentrations 1.6 3.1 mol %. The...
The understanding of the power loss contributions each source is essential for an effective development swash plate type axial piston pump. However, it difficult to obtain assessment distribution due lack methodologies that allow independent evaluation source. This paper addresses this challenge using most recent simulation methods. It describes determination source, along with corresponding performance, and principle their prediction during design phase. also reports validation model by...
We have studied the quantized conductance of a one-dimensional ballistic channel in two-dimensional electron gas back-gated GaAs/AlGaAs heterostructure. A standard Schottky split-gate fabricated with electron-beam lithography techniques is used to define channel, but we incorporate an epitaxially grown situ back-gate, situated ∼1 μm below gas, provide additional control carrier density. Quantized steps can be induced by changing bias on either gate, highlighting self-consistent nature...
Negative resist image distortion is caused by swelling during development and a major problem in ultrahigh resolution electron beam lithography. This has been overcome through the use of ultrasonically assisted development. In addition, exposure dose latitude increased 50% compared to conventional dip development, due improvement contrast. These advantages have exploited order realize ∼6 nm wide lines calixarene resist.
An isothermal processing system using a 2-kW electron beam is described. Processing of areas up to 4×4 in. achieved by rapidly scanning the in multiple scan mode. analysis this method and some typical heating cycles for silicon wafers are presented. There good agreement between theoretically predicted experimentally measured temperatures. Additionally, closed-loop operation demonstrated where an optical pyrometer used control current. This machine can either process whole wafers, or...
In this paper, selected mechanical properties of a circular AlGaN/GaN diaphragm with an integrated high electron mobility transistor (HEMT) intended for pressure sensing are investigated. Two independent methods were used to determine the residual stress in proposed diaphragms. The resonant frequency method using laser Doppler vibrometry (LDV) vibration measurement was chosen measure natural frequencies while diaphragms excited by acoustic impulse. It is shown that strongly dependent on...
Abstract This paper reports the characteristics of gallium nitride layers that have been grown on top an etched array nanorods. Nanoimprint lithography has used to create nanorods a wafer‐scale are subsequently passivated allow selective regrowth from their tips by MOVPE. The first epitaxial growth step favoured lateral and second resulted in planar coalesced layer nitride. It was found smooth planarised overgrowth required careful timing transition between two steps crystallographic quality...
We report on charge transport properties of polycrystalline pentacene films with variable average grain size in the range from 0.1 to 0.3 µm controlled by preparation technology. illustrate organic field-effect transistors decrease effective mobility and presence traps size. Analysis transfer excitons reveals mobile density steady-state voltammetry showed significant increase oxygen- hydrogen-related defects. also briefly discuss accumulation defects boundary show relation between defect length.
The authors have developed a processing method for whole-wafer tunnel junctions which allows the preparation of planar with just two lithographic steps and largely eliminates inherent capacitance potential failure problems associated overlap between base electrode counterelectrode metallization common to all existing methods. basic feature this self-aligning (SAWW) process is that pattern used create also defines junction area. Results preliminary trials are presented possible future...
Abstract Parylene‐C thin films in a thickness range from 7 to 35 nm are deposited on silicon oxide and investigated for their structural morphological properties by different methods. It is shown that spectroscopic ellipsometry (SE) powerful tool obtain spatially resolved information the homogeneity of revealing relative changes layer refractive index. However, results can be considerably improved combination with X‐ray reflectivity (XRR) which provides highly accurate thickness. The XRR...
The present paper is based on study of polycrystalline ZnO:Al films deposited by RF sputtering in Ar atmosphere and pulsed laser deposition (PLD) p n-type Si. structural, electrical optical properties processed devices were investigated before after annealing temperature range 400–600°C. Films show conductive layer. After N2 the conductivity ZnO layer increased as ZnO/Si interface exhibits diffusion Si into O This effect was confirmed promising photodetector spectral 380 ÷ 1050 nm SIMS depth...
An InGaAs/InP avalanche photodiode (APD) with a sectional InGaAsP/InP charge layer at the heterointerface between InGaAs absorption and InP multiplication region has been designed, fabricated tested. We demonstrate new APD structure that utilizes 140 nm thin 500 layer. The band diagram, electrical field distribution current–voltage (I–V) characteristics up to punch-through voltage have simulated. mesa shows responsivity 0.9 A/W 1310 20 V gain 10 near breakdown 36 V. measured results revealed...
ADVERTISEMENT RETURN TO ISSUEPREVAddition/CorrectionORIGINAL ARTICLEThis notice is a correctionRoom-Temperature Charge Stability Modulated by Quantum Effects in Nanoscale Silicon IslandS. J. Shin, Lee, H. Kang, B. Choi*, S.-R. Eric Yang, Y. Takahashi, and D. G. HaskoCite this: Nano Lett. 2011, 11, 6, 2578Publication Date (Web):May 2011Publication History Published online11 May 2011Published inissue 8 June...
We report on charge transport properties of polycrystalline pentacene films with variable average grain size in the range from 0.1 to 0.3 µm controlled by preparation technology. illustrate organic field-effect transistors decrease effective mobility and presence traps size. Analysis transfer excitons reveals mobile density steady-state voltammetry showed significant increase oxygen- hydrogen-related defects. also briefly discuss accumulation defects boundary show relation between defect length.