A5080329838- Advancements in Photolithography Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Nanomaterials and Printing Technologies
- Advanced Surface Polishing Techniques
- Electrohydrodynamics and Fluid Dynamics
- Electron and X-Ray Spectroscopy Techniques
- Fluid Dynamics and Thin Films
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- 3D IC and TSV technologies
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Image Enhancement Techniques
- Microwave Engineering and Waveguides
- Block Copolymer Self-Assembly
- Innovative Microfluidic and Catalytic Techniques Innovation
- Nanowire Synthesis and Applications
- Industrial Vision Systems and Defect Detection
- Advanced Sensor and Energy Harvesting Materials
- Energy Harvesting in Wireless Networks
- Surface Modification and Superhydrophobicity
- Optical Coatings and Gratings
- Antenna Design and Analysis
- Nanoparticle-Based Drug Delivery
- Color Science and Applications
IMEC
2012-2024
KU Leuven
2012-2014
University of Tehran
2007-2009
Owing to photon shot noise and inhomogeneous distribution of the molecular components in a chemically amplified resist, resist patterns defined by extreme ultraviolet (EUV) lithography tend suffer from stochastic variations. These variations are becoming more severe as critical dimensions continue scale down, can thus be expected major challenge for future use single exposure EUV lithography. Complementing with directed self-assembly (DSA) block-copolymers provides an interesting opportunity...
Evaporation of sessile droplets with a small contact angle (below 90°) is studied here extensively on silicon substrates. We focused our work the origin creation watermarks wafers. A thorough understanding droplet evaporation vital importance for examining drying rate, flow patterns observed inside drops, and residual deposits. The concentration each potential dissolved species (e.g. silica or silicic acid) can also be predicted confronted to their solubility. developed theoretical model...
While the semiconductor industry has reached high-volume manufacturing of 7 nm technology node (N7), patterning processes for future nodes N5, N3 and even below, are being investigated developed by research centers. To achieve critical dimensions gratings these nodes, we require multipatterning approaches, such as self-aligned double/quadruple/octuple (SADP/SAQP/SAOP) multiple litho-etch (LE) patterning, in combination with 193i lithography EUV lithography. These need to be subsequently cut...
For printing the most critical features in semiconductor devices, single exposure extreme ultraviolet (EUV) lithography is quickly advancing as a replacement for ArF immersion-based multipatterning approaches. However, transition from 193 nm to 13.5 light severely limiting number of photons produced by given source power, leading photon shot noise EUV patterns. In addition, inhomogeneous distribution components inside conventional photoresists adding variability, especially when dimensions...
Wetting and drying in wet cleaning process received a lot of attention to meet the requirements advanced technology nodes. Drying performance is evaluated by number watermarks produced during rinsing steps. Watermarks appear evaporation very small sized water droplet remaining at end step. In this article influence relative humidity oxygen concentration ambient on formation different watermark shapes studied ultra-pure HF-last silicon surfaces. A qualitative model presented taking into...
With the downscaling of devices, due to device geometry shrinkage, total number cleaning steps has increased dramatically. As a result, drying cycles after as well. shrinks with integration density increase, it is noteworthy that perfect efficiency mandatory obtain high performance [. Basically, mechanism wafer in semiconductor industry can be explained as: first reducing amount liquid on surface by mechanical forces. There are some approaches for removing such spinning, pressure gas blowing...
The grouping method assisted EPE-aware control is being explored in a multi-feature dual layer Logic use case. EPE metric estimated using angle resolved optical Scatterometry based overlay and electron beam-based metrology (large field of view SEM) for the reconstruction edge-to-edge distance between Metal Via pattern. In setup phase, sensitivities to dose focus have been derived data from FEM wafer. optimization, scanner sub-recipes, outperforms traditional optimization simulations showing...
In this work we demonstrate and report the capability of YieldStar CDSEM to measure etch depths metal in a data-driven approach. We find that both Yieldstar enable recess depth measurements with precision 0.5 nm over range 17 nm. Combining (hybrid metrology) further improved prediction errors by 0.1
Evaporation of unpinned sessile droplets with small contact angles (below 90°) is studied here extensively. We focused our work on the constant contact-angle mode in which area droplet substrate decreases. A thorough understanding evaporation vital importance for examining drying rate, flow patterns observed inside drops, and residual deposits. The concentration each potential dissolved species (e.g. silica or silicic acid) can also be predicted confronted to their solubility. developed a...
Dynamics of the evaporative drying ultrapure water (UPW) droplets on a hydrophobic Si surface in controlled ambient is studied. A quantitative study watermarks (WM) residue volume and mass performed from low to high humidity. The effects oxygen gas phase dissolved O 2 concentration UPW are investigated for different levels shape studied estimate mechanism residual colloids/particles deposition presence conditions. Our WM formation humidity showed linear increase as function initial droplet volume.
The improved ultraviolet (UV)-assisted vertical etching of polyethylene terephthalate (PET) for manufacturing microsystem components is reported. PET achieved by using a dimethylformamide solution assisted illumination onto patterned substrate. process carried out in low temperature solutions the benefits shrinkage and deformation PET, yet having high aspect ratio structures relatively rates etching. Furthermore, mask engineering done selecting an appropriate order to have crack-free...
A spiral antenna operating at 24 GHz designed for scientific and medical (ISM) band is reported. The procedure fully compatible with standard CMOS fabrication process. has been achieved on silicon substrates using a bulk micromachining technique. To improve the radiation efficiency to minimize transmission loss, silicon-based membrane employed substrates. optimize occupied area of square structure selected rather than circular one. simulation results show good matching wide bandwidth...
Extreme ultraviolet (EUV) materials are deemed as critical to enable and extend the EUV lithography technology. Currently both chemically amplified resist (CAR) metal-oxide (MOR) platforms candidates print tight features on wafer, however patterning requirements, process tonality (positive or negative), illumination settings reticle (dark bright) play a fundamental role material performance in consequence choice. In this work we focus of staggered pillars using single exposure, by looking at...
The key challenge to enable a good defectivity control for extreme ultraviolet (EUV) single expose at 32nm pitch is understand what are the main drivers defect generation. CD one of contributors, and has many sources variability (reticle, imaging, die layout, scanner). paper will first discuss quantification sensitivity CD, identification variations (EUV flare, black border, etch, APC, mask bias etc...). All those effects do not have same consequences on level (only nanobridges be considered...
The wet cleaning process plays an important role in advanced semiconductor industry. Particularly when bare silicon areas are exposed, wafer drying can result undesired watermark (WM) residues on the surface [1-2]. In principle there three components effecting formation, shape and size of WM. 1) composition ambient like oxygen concentration, relative humidity temperature affect WM formation [3]. 2) liquid: factors such as pH amount dissolved species inside liquid influence composition. 3)...
Abstract: Wet nanoscale etching of silicon is very dependent to surface reactive sites like step edges, defect densities, and crystallographic planes [1]. Ultra-pure water (UPW) used during rinsing drying steps in the sub-nanometer range furthermore this silica residues will cause ring shape marks on [2-3]. In paper are characterized by physical chemical characterization techniques evaluate process. The conversion hydrogen bond hydroxide investigated different crystal orientations monitor...
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Abstract not Available.
In this paper we have evaluated alignment and overlay for a Ruthenium Direct Metal Etch process. Depending on the integration strategy, line resistance lithography requirements, process with no remaining topography may be preferred from point of view, but due to light absorption through thick layer will challenging. studied maximum thickness which sensor can still detect marks below quantify quality diffraction-based an ASML YieldStar metrology tool.