Abstract A full-color monolithic micro-light-emitting diode (LED) display based on InGaN quantum wells is demonstrated. We stacked red, green, and blue (RGB) light-emitting layers selectively removed regrew a p-type layer to create distinct areas single chip that emitted RGB colors. Subsequently, we fabricated micro-LED with pixel pitch of 30 μm number 96 × 96. Each color subpixel emits light peak. obtained image by driving the using microcontroller. The proposed semiconductor process-based...

Abstract We demonstrate a monolithic InGaN light-emitting diode (LED) that emits red, green, and blue (RGB) light. The proposed LED has simple structure with stacking RGB layers on n-GaN, wherein unnecessary were removed based the desired emission color p-GaN layer. electroluminescence characteristics of indicated peak wavelengths at 20 mA are R : 632.9 nm, G 519.0 B 449.5 external quantum efficiencies 0.28%, 8.3%, 0.84%. This can be manufactured using only semiconductor processes, thus...

An all-optical modulation method for semiconductor lasers using three energy levels in n-doped quantum wells is demonstrated. The principle based on the third-order interaction between interband-and intersubband-resonant light quantum-well structure. demonstrated by a real-time single-shot experiment laser interband-resonant and CO/sub 2/ light. dependences of depth polarization wavelength indicate that achieved this principle. It pointed out thermal effect appears when power becomes...

A multi-quantum-shell (MQS) grown on a GaN nanowire is promising three-dimensional active region and it expected to show excellent performance, compared with conventional nitride-based LEDs. However, there are no suitable simulators for calculating optical properties of MQS-LEDs, because their complex structure. In this study, hybrid simulation, which composed the finite-difference time-domain method, rigorous coupled wave analysis ray tracing developed. Applying useful tool calculation...

The aim of this research is to realize high‐efficiency light‐emitting diodes (LEDs) with a 3D core‐shell GaN nanowire. This article describes the growth nanowires, formation indium tin oxide (ITO) around p‐GaN outer shell and characteristics fabricated nanowire‐LED (NW‐LED). structural properties n‐GaN core, GaInN/GaN multiquantum (MQS), shell, ITO electrode are investigated by scanning electron microscopy transmission microscopy. In addition, optical electrical NW‐LEDs evaluated. findings...

Abstract The development of AlGaN-based high-efficiency UVC-LEDs capable effectively eliminating viruses and bacteria is desired. In this study, we demonstrate a significant improvement in optical output power (LOP) by applying interference technology organic fluorine compound packaging technology. Experiments calculations revealed that an LED die LOP was achieved through adjusting the length to approximately 0.7· λ n , resulting amplification light intensity caused emitted perpendicular...

Here we propose novel active multi-mode-interferometer (MMI) laser diodes (LDs) for 14XXnm fiber amplifier pump applications. The waveguide of the LDs is consisted from 1x1-MMI couplers integrated with 1st order-mode permitted waveguides to enhance total area. Although there no single-mode region inside cavity, MMI-LDs emitted in stable single-transverse-mode output up maximum power. Moreover, they achieved high power 1.46W, and low driving voltage only 1.75V at 1W

A newly developed moth‐eye patterned sapphire substrate (MPSS) technology increased light extraction efficiency (LEE) in the vertical direction nitride‐based blue emitting diodes (LEDs). MPSS is characterized by a submicron‐scale periodical structure that exerts Bragg diffraction effect at interface between gallium nitride (GaN) and sapphire. Through simulations experiments, it was revealed emphasis of optimizing enhanced emission from LEDs. As result, resin‐encapsulated, large‐sized LEDs on...

Abstract We report the 1000 mW single mode operation of a planar blue‐violet laser diode with inner stripe waveguide. Kink‐free output surpassed 400 (CW) and 600 (50 ns pulsed, duty 50%) at temperatures up to 90 °C. Precise optical field design for narrow waveguide as well damage‐free formation was key achieving watt class output. By utilizing buried AlN current confinement layers, 1.0 μm wide successfully fabricated. Planar structure also has advantage small increase in electrical...

A GaInN/GaN multiquantum shell (MQS) structure grown over GaN nanowires can be utilized as active regions in optoelectronic devices because of its advantages such high crystalline quality and the absence internal polarization. To improve current injection toward sidewall MQS regions, a tunnel junction (TJ) n‐GaN‐embedded cap layer are adopted without using an indium‐tin‐oxide film. light‐emitting diode (LED) composed n‐GaN nanowires, TJs, is demonstrated for first time. Without activation...

In this study, the room-temperature pulsed operation of a nitride nanowire-based multi-quantum shell laser diode with thick p-type GaN cap layer grown on conventional c-face substrate was demonstrated using metalorganic chemical vapor phase epitaxy method. The threshold current density approximately 62 kA cm−2, and voltage at 14 V. Optical spectral characteristics two peak wavelengths, 403 417 nm, were observed.

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> Large-scale aluminum stabilized superconductors are applied to accelerator magnets, SMES, fusion magnets and so on. Authors have investigated transient stability of Large Helical Device (LHD) conductor, which consists a NbTi/Cu Rutherford cable, pure stabilizer, copper sheath, cooled by saturated He I, sub-cooled I pressurized II. The peculiar phenomena, such as “traveling normal zone”...

Here, we systematically investigated the growth conditions of an n-GaN cap layer for nanowire-based light emitters with a tunnel junction. Selective-area multiple quantum shell (MQS)/nanowire core–shell structures on patterned n-GaN/sapphire substrate was performed by metal–organic vapor phase epitaxy, followed p-GaN, n++/ p++-GaN junction, and layer. Specifically, two-step carried out under various to determine optimal flat Scanning transmission electron microscopy characterization revealed...

Interband-resonant light modulation by intersubband-resonant in undoped quantum wells is investigated. Theoretical calculation for the carried out considering not only excitonic interband-transition but also continuous level transition between conduction and valence bands. The characteristics are compared with those of using n-doped wells. possibility well successfully shown real-time single-shot experiment Ti-Al/sub 2/O/sub 3/ CO/sub 2/ lasers interband- lights at room temperature.

Active multi-mode interferometer laser diodes (LDs), implemented in InGaAsP/InP, achieved a significant reduction of 40% (at 0.4 W output) electric power consumption compared to regular single lobe LDs. With them, high output 0.7 was also obtained at 14XX nm.

Cooling stability tests of the Large Helical Device (LHD) conductor immersed in pressurized He I and II were carried out. A small test coil wound short-circuited with a LHD on stainless steel bobbin was used. The set coaxially center superconducting magnet (field magnet), which supplies certain magnetic field to conductor. large current supplied by use transformer effect, that is, induced increasing magnet. Stability at pulse heat input performed for flux densities from 1.2 T 6.8 bulk liquid...

We review our recent progress in novel planar blue-violet laser diodes (BV-LDs). The BV-LDs are characterized by an inner-stripe waveguide formed with a buried AlN current-blocking layer and wide regrown cladding that also acts as current heat spreader. These features enable high-power operation for thanks to their low electrical thermal resistance even narrow-stripe waveguide. In this paper, we report successful demonstration of the utilizing low-temperature-grown layer. Low was confirmed...

Low current, highly reliable operation at 80°C has been achieved for 650 nm band AlGaInP laser diodes (LDs) with a strained multiquantum well active layer on (115)A substrate the first time. The current was as low 60 mA and lifetime 92 kh 80°C, 5 mW. It also shown that density is dominant factor in determining lifetime.

The interband-resonant light modulation by the intersubband-resonant in selectively n-doped quantum wells is investigated. efficiency depends greatly on degree of nonlinear optical coupling between interband and lights. It shown theoretically experimentally that selective n-doping barrier layers very effective to increase thus efficiency. thermal hot carrier effects are also discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

Newly designed active multimode-interferometer laser diodes (MMI-LDs) with asymmetric cladding structure achieved significant reduction in driving voltage high output power. The implemented MMI-LDs less than 2 V at a power of more 1 W.

Highly reliable operation has been achieved for 650 nm band AlGaInP laser diodes (LDs) at 80°C the first time. An LD with a multiquantum well active layer grown on (115)A substrate produced two-fold gain compared an vicinal (001) substrate. The threshold current was 40 mA, and maximum temperature 5 mW beyond 100°C. median time before failure estimated to be 5,000 h.

This paper deals with experimental methods to perform the dynamic stability test of large-scale superconductors cooled by He II. The large helical device (LHD) conductor used in this work has a critical current dozens kA. It is difficult supply such immersed pressurized II use an external power laboratory scale. transformer type supplying method was proposed. small coil wound and short-circuited LHD on stainless steel bobbin. set center superconducting coaxially, which supplies magnetic...

Numerical simulations were carried out on the transient stability of large-scale composite superconductors against a thermal disturbance, that is, LHD conductor, which consists NbTi/Cu Rutherford cable, pure aluminum stabilizer, and copper sheath around composite. The also performed an Al-less test is conductor without Al stabilizer half sheath. recovery propagation characteristics initiated normal zone simulated to know effect cooled by Liq.He II. initiating current at certain magnetic flux...

Abstract We describe highly reliable operation of a novel planar inner stripe blue‐violet laser diode (BV‐LD). A regrowth technique makes it possible to simultaneously fabricate low‐resistive superlattice (SL) structure both on the current‐injecting narrow area and AlN current‐blocking layer. This allows for low operating voltage over 1000 h stable at single‐mode output power 200 mW 80 °C. The results obtained here clearly indicate that this is desirable candidate high‐power light source...