A5107243367- Particle Detector Development and Performance
- Radiation Detection and Scintillator Technologies
- CCD and CMOS Imaging Sensors
- Particle physics theoretical and experimental studies
- Silicon Carbide Semiconductor Technologies
- Nuclear Physics and Applications
- Analog and Mixed-Signal Circuit Design
- Advanced DC-DC Converters
- Electromagnetic Compatibility and Noise Suppression
- Multilevel Inverters and Converters
- Magnetic confinement fusion research
- Superconducting Materials and Applications
- Quantum Chromodynamics and Particle Interactions
- High-Energy Particle Collisions Research
- Astrophysics and Cosmic Phenomena
- Non-Invasive Vital Sign Monitoring
- Dark Matter and Cosmic Phenomena
- Neutrino Physics Research
- Fusion materials and technologies
- Law, logistics, and international trade
- Advancements in Semiconductor Devices and Circuit Design
- Medical Imaging Techniques and Applications
- Radiation Effects in Electronics
- Atomic and Subatomic Physics Research
- Optical and Acousto-Optic Technologies
Oak Ridge National Laboratory
2006-2024
University of Tennessee at Knoxville
2014
United States Naval Research Laboratory
2014
University of California, Berkeley
2014
Naval Postgraduate School
2014
Arkansas Power Electronics International
2014
École Nationale Supérieure des Mines de Paris
2003
Laboratoire de Physique Subatomique et des Technologies Associées
2003
Nantes Université
2003
Joint Institute for Nuclear Research
1998
A compact model for SiC Power MOSFETs is presented. The features a physical description of the channel current and internal capacitances has been validated dc, CV, switching characteristics with measured data from 1200-V, 20-A power MOSFET in temperature range 25°C to 225°C. peculiar variation on-state resistance also demonstrated through measurements accounted developed model. In order improve user experience model, new datasheet driven parameter extraction strategy presented which requires...
Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because its remarkable material properties. SiC is a wide bandgap semiconductor larger bandgap, lower leakage currents, higher breakdown electric field, and thermal conductivity, which promotes switching frequencies for high applications, temperature operation, results in density relative to Si [1]. The proposed work focused on design gate driver drive MOSFET, Cree process, rise/fall times...
A gate buffer fabricated in a 2-μm 4H silicon carbide (SiC) process is presented. The circuit composed of an input stage with push-pull output stage, and using enhancement mode N-channel FETs optimized for SiC power switching devices. Simulation measurement results the are presented compared operation at various voltage supply levels, capacitive load 2 nF. Details design including layout specifics, simulation results, directions future improvement this In addition, plans its incorporation...
This paper presents the testing results of an all-silicon carbide (SiC) intelligent power module (IPM) for use in future high-density electronics applications. The IPM has high-temperature capability and contains both SiC devices gate driver integrated circuits (ICs). ICs allows them to be packaged into located physically close devices. provides a distinct advantage by reducing loop inductance, which promotes high-frequency operation, while also overall volume system through higher levels...
Abstract Studies have been performed on the release mechanism for large pellets using high pressure gas in a shattered pellet injector. Typically, are dislodged from cryogenic surface and accelerated down barrel delivered by fast-acting propellant valve. The impact an angled which shatters into many small fragments before entering plasma. This technique was initially demonstrated DIII-D (Commaux et al 2016 Nucl. Fusion 56 046007) is now deployed JET, KSTAR, ASDEX-Upgrade, other tokamaks...
The design and test of the first undervoltage lock-out circuit implemented in a low-voltage 4H silicon carbide process capable single-chip integration with power MOSFETs is presented. circuit, block protection circuitry gate driver topology designed for use plug-in hybrid vehicle charger, was demonstrated to have rise/fall times compatible MOSFET switching speed 250 kHz while operating over targeted temperature range between 0°C 200°C. Captured data show be functional from -55°C 300°C. results
A custom CMOS analog to digital converter was designed and a prototype 8-channel ADC ASIC fabricated in 1.2 /spl mu/m process. The circuit uses Wilkinson-type architecture which is suitable for use multi-channel applications such as the PHENIX detector. design features include differential positive-ECL input high speed clock selectable control 11 or 12-bit conversions making it multiple subsystems. Circuit topologies layout specifics, including power consumption, maximum speed, INL, DNL are...
We present an ASIC for a <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> He gas detector to be used in small angle neutron scattering experiments at the spallation source oak ridge. The is composed of 64 channels with low noise charge amplification, filtering, timing and amplitude measurement circuits, where innovative current-mode peak-detector digitizer (PDAD) adopted. proposed PDAD provides same time peak detection A/D conversion real...
A bright neutron source such as the spallation (SNS) places extreme requirements on detectors including excellent 2-D spatial imaging and high dynamic range. Present have either shown position resolutions that are less than acceptable or they exhibit excessive paralyzing dead times due to brightness of source. detector concept known MicroMegas (MicroMEsh GAseous Structure) has been developed at CERN, Geneva, Switzerland, for high-energy physics charged-particle tracking applications great...
A gate driver fabricated in a 2-μm 4H silicon carbide (SiC) process is presented. This was optimized for vertical power MOSFET fabrication but accommodated integration of few low-voltage device types including N-channel MOSFETs, resistors, and capacitors. The topology employed incorporates an input level translator, variable connections, separate supply connectivity allowing selection the output signal drive amplitude. stage utilizes source follower pull-up that both overdriven body...
A high-voltage pulsed power supply (HVPPS) has been designed, prototyped, and tested for driving an eddy current actuated propellant valve the International Thermonuclear Experimental Reactor (ITER) disruption mitigation system. The (HV) dc output voltage is software programmable, energy storage capacitor bank can be readily reconfigured as 200, 400, 600, 800 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
We report the development of a battery-powered portable chemical identification device for field use consisting an acousto-optic tunable filter (AOTF)-based Raman spectrometer with integrated data processing and analysis software. The various components custom circuitry are into self-contained instrument by control software that runs on embedded single-board computer (SBC), which communicates modules through 48-line bidirectional TTL bus. user interacts via touch-sensitive liquid crystal...
Low-power analog filter banks provide frequency analysis with minimal power and space requirements, making them viable solutions for integrated remote audio- vibration-sensing applications. Compared their digital counterparts, are better suited to achieve the lower consumption necessary IoT In this work, design implementation of a sub-threshold complementary metal-oxide semiconductor (CMOS) low-power tunable bandpass channel signal spectrum discrimination is presented, including performance...
A sensor system enabling real-time monitoring of organ perfusion following transplantation is presented. This uses a three wavelength oximetry-based approach. The instrument intended for implantation at the site during to provide reporting status tissue 7-10 days procedure. Data transmitted from localized receiver using direct sequence spread spectrum techniques 916 MHz. In this paper, sensing method and associated electronics implementation are present miniaturization summarized along with...
A new two-dimensional thermal neutron detector concept that is capable of very high rates being developed. It based on conversion in <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> He an ionization chamber (unity gas gain) uses only a cathode and anode plane; there no additional electrode such as Frisch grid. The simply the entrance window, plane composed discrete pads, each with their own readout electronics implemented via application...
A CMOS voltage DAC has been developed for integration into multiple front-end electronics ASICs associated with the PHENIX detector located at RHIC accelerator of Brookhaven National Laboratory. The topology allows wide-range output programmability by selection an offset and on-chip resistor transistor sizing. is trimless requires no external components, making it ideal highly integrated collider systems. Errors bias are minimized using a that implements ratiometric relationship which...
A custom signal processing and data acquisition platform has been developed to facilitate optimization of optics-based sensors associated electronics for tissue perfusion assessment. This laboratory system allows simultaneous use four optical probes, two photo-spectrometer up eight external analog inputs intended synchronized digitization commercial physiological monitoring equipment. Each probe is composed a photo-detector three LED-based excitation wavelengths, in either transmission or...
The TGV32, a 32-channel preamplifier-multiplicity discriminator chip for the Multiplicity Vertex Detector (MVD) at PHENIX, is unique silicon preamplifier in that it provides both an analog output storage memory and weighted summed-current conversion to channel multiplicity count. architecture test results of are presented. Details about design preamplifier, discriminator, programmable digital-analog converters performance as well process variations fabricated 1.2-/spl mu/m, n-well, CMOS process.
The TGV32, a 32-channel preamplifier–multiplicity discriminator chip for the multiplicity vertex detector (MVD) at PHENIX, is unique silicon preamplifier in that it provides both an analog output storage memory and weighted summed-current conversion to channel count. architecture test results of are presented. Details about design preamplifier, discriminator, programmable digital–analog converters performance as well process variations fabricated 1.2 μm, n-well, complementary...