Feiyu Li

ORCID: 0000-0003-1770-9473
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About
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Research Areas
  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Water Treatment and Disinfection
  • Advancements in Semiconductor Devices and Circuit Design
  • Silicon Carbide Semiconductor Technologies
  • Smart Grid Energy Management
  • Advanced Condensed Matter Physics
  • Ga2O3 and related materials
  • Magnetic and transport properties of perovskites and related materials
  • Energy Harvesting in Wireless Networks
  • Microgrid Control and Optimization
  • Low-power high-performance VLSI design
  • Bacterial biofilms and quorum sensing
  • Electronic and Structural Properties of Oxides
  • Pharmaceutical and Antibiotic Environmental Impacts
  • Ferroptosis and cancer prognosis
  • Semiconductor Quantum Structures and Devices
  • Semiconductor materials and interfaces
  • Biofuel production and bioconversion
  • Iron-based superconductors research
  • Water Systems and Optimization
  • Physics of Superconductivity and Magnetism
  • Antibiotic Resistance in Bacteria
  • Environmental Chemistry and Analysis
  • Smart Grid Security and Resilience

Shandong University
2023-2025

Crystal Research (United States)
2025

State Key Laboratory of Crystal Materials
2023-2025

University of Macau
2023-2025

Institute of New Materials
2023

Harbin Institute of Technology
2017-2023

Yinchuan First People's Hospital
2023

Qingdao University
2023

Wuhan University
2023

Institute of Microelectronics
2023

Objective: To analyze the epidemiological history, clinical manifestations, treatment and short-term prognosis of 31 cases 2019 novel coronavirus (2019-nCoV) infection in children from six provinces (autonomous region) northern China. Methods: A retrospective analysis symptoms, signs, laboratory examinations, chest imaging, 2019-nCoV was conducted. The patients were diagnosed between January 25th, 2020 February 21st, 21 hospitals 17 cities Shaanxi, Gansu, Ningxia, Hebei, Henan Shandong....

10.3760/cma.j.cn112140-20200225-00138 article EN 2020-03-02

Ramming settlement is a key index to reflect the quality of dynamic compaction. It mainly relies on manual monitoring, which seriously affects construction efficiency, and safety cannot be guaranteed. In this paper, an algorithm Perspective 3-Point Rammer Pose Estimation (P3P-RPE) based monocular vision measurement proposed, can carried out simultaneously with construction, effectively avoiding problem that compaction operation needs terminated during monitoring. Then error propagation model...

10.1016/j.measurement.2023.112941 article EN cc-by-nc-nd Measurement 2023-04-27

The search for quantum spin liquids (QSL) and chemical doping in such materials to explore superconductivity have continuously attracted intense interest. Here, we report the discovery of a potential QSL candidate, pyrochlore-lattice β-NaYbO2. Colorless transparent NaYbO2 single crystals, layered α-NaYbO2 (∼250 μm on edge) octahedral β-NaYbO2 (∼50 edge), were grown first time. Synchrotron X-ray single-crystal diffraction unambiguously determined that newfound belongs three-dimensional...

10.1021/jacs.4c13166 article EN Journal of the American Chemical Society 2025-02-06

Spins in strongly frustrated systems are of intense interest due to the emergence intriguing quantum states including superconductivity and spin liquid. Herein we report discovery cascade phase transitions large magnetic anisotropy averievite CsClCu5P2O10 single crystals. Under zero field, undergoes a first-order structural transition at around 225 K from high temperature centrosymmetric P-3m1 low noncentrosymmetric P321, followed by an AFM 13.6 K, another centering ~3 ~2.18 K. Based upon...

10.1021/acs.chemmater.4c01342 article EN Chemistry of Materials 2024-09-28

Objective This study aimed to retrospectively evaluate the feasibility and reliability of low-contrast agent dose dual-energy computed tomography (DECT) monochromatic imaging in pulmonary angiography. Methods Computed angiography was performed 86 patients, 41 120-kVp (CT) 45 DECT with dose. The images were reconstructed at optimal kiloelectron-voltage (keV), demonstrating best contrast-to-noise ratio between artery soft tissue, 70 keV. Image quality compared by quantitative subjective...

10.1097/rct.0b013e31828f5020 article EN Journal of Computer Assisted Tomography 2013-01-01

This article proposed a hard switching high-temperature reverse bias (HS-HTRB) stress test method with high measurement delay tolerance to study the impacts and mechanisms of hot electron effects on stability threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\mathrm {th}}$ </tex-math></inline-formula> ) in 650-V gallium nitride (GaN)-based metal–insulator–semiconductor high-election...

10.1109/jestpe.2021.3061570 article EN IEEE Journal of Emerging and Selected Topics in Power Electronics 2021-02-24

Klebsiella pneumoniae is an opportunistic pathogen, and its hypervirulent variants cause serious invasive community-acquired infections. A genomic view of K. NTUH-2044 for the carbohydrate phosphotransferase system (PTS) found a putative fructose PTS, namely, Frw PTS gene cluster. The deletion mutant complemented frwC (KP1_1992), which encodes fructose-specific enzyme IIC, were constructed, phenotypes characterized. This transmembrane protein responsible utilization. can enhance biofilm...

10.1128/iai.00340-18 article EN Infection and Immunity 2018-05-30

This paper reports on the studies of current collapse phenomenon induced by surface trapped charges during gate pulse switching in AlGaN/GaN heterostructure high-electron-mobility transistors. A physical-based model, taking into account distribution features applied electric field along device barrier layer near drain-side corner, is proposed to analyse electron trapping and de-trapping processes at ionized donor-like traps off-state or on-state process. Then model analysed verified TCAD...

10.1088/1361-6463/aad455 article EN Journal of Physics D Applied Physics 2018-07-19

Temperature-dependent threshold voltage (Vth) stability is a significant issue in the practical application of semi-conductor power devices, especially when they are undergoing repeated high-temperature operation condition. The Vth analytical model and its dependent on operations wide-bandgap gallium nitride (GaN)-based high electron mobility transistor (HEMT) devices that were investigated this work. temperature effects physical parameters-such as barrier height, conduction band,...

10.3390/mi9120658 article EN cc-by Micromachines 2018-12-14

A total of 240 1-day-old Arbor Acres male broilers were randomly divided into five dietary treatments (control feed (CON), supplemented with 75 mg/kg aureomycin (ANT), 7.5 × 108 CFU/kg (Ba1) and 2.5 109 (Ba1), (Ba3) Bacillus amyloliquefaciens TL106, respectively) to investigate the probiotic effect TL106 instead antibiotics in broilers. On days 1−21, average daily gain Ba groups was increased compared CON group (p < 0.05). In addition, feed/gain ratio lower than that ANT on 22−42 1−42...

10.3390/ani12223085 article EN cc-by Animals 2022-11-09

Biofilm formation is important in both the environmental and intestinal phases of Vibrio cholerae life cycle. Nevertheless, most studies V. biofilm focus on monospecies cultures, whereas nearly all communities found nature consist a variety microorganisms. Multispecies biofilms formed between other bacteria environment interactions that exist these species are still poorly understood. In this study, influence Escherichia coli was studied context vitro coculture vivo coinfection. To...

10.1128/aem.00938-21 article EN Applied and Environmental Microbiology 2021-07-14

Background: Although recovery-oriented services have been conceptualized to improve personal recovery, related research often focuses on measures of clinical recovery. Identifying the relationships between and psychosocial variables will inform service components outcome measurement in services.Aims: This study sought determine connection recovery two sets potential contributors: (i.e., empowerment, resilience, consumer involvement) functional indicators recovery.Method: These were examined...

10.1080/09638237.2018.1521932 article EN Journal of Mental Health 2019-01-19

The photochemical reactions performed by transition metal complexes have been proposed as viable routes towards solar energy conversion and storage into other forms that can be conveniently used in our everyday applications. In order to develop efficient materials, it is necessary identify, characterize optimize the elementary steps of entire process on atomic scale. To this end, we studied photoinduced electronic structural dynamics two heterobimetallic ruthenium–cobalt dyads, which belong...

10.1039/c5fd00084j article EN Faraday Discussions 2015-01-01

Rare earth nickelates are of significant interest due to their emerging physical properties such as high-temperature superconductivity, multiferroicity, metal–insulator transition, charge and spin order, etc. However, single-crystal growth these remains a central challenge. Here, single crystals the trilayer nickelate La4Ni3O10 with dimensions up 182 μm were successfully grown for first time using K2CO3 flux at ambient pressure. The as-grown crystallize in P21/a space group room temperature...

10.1021/acs.cgd.3c01049 article EN Crystal Growth & Design 2023-12-06

In this work, we performed an investigation on the electrical characteristics of interfaces SiON/AlGaN and SiON/GaN by fabricating a partially gate-recessed metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) fully field-effect (MIS-FET). The fabricated MIS-HEMT exhibits smaller static on-resistance (Ron) 12.7 Ω · mm, while MIS-FET achieves normally-off operation. As result over-etching in gate trench, higher trap state density 2 × 1013 cm−2eV−1 at interface comparison...

10.1088/1361-6463/abbf79 article EN Journal of Physics D Applied Physics 2020-10-08

A gallium nitride (GaN) semiconductor vertical field-effect transistor (VFET) has several attractive advantages such as high power density capability and small device size. Currently, some of the main issues hindering its development include realization normally off operation improvement breakdown voltage (BV) characteristics. In this work, a trenched-gate scheme is employed to realize VFET. Meanwhile, an additional back current blocking layer (BCBL) proposed inserted into GaN VFET improve...

10.3390/electronics8020241 article EN Electronics 2019-02-20

Single crystals of the perovskite nickelate NdNiO3 with dimensions up to 50 μm on edge have been successfully grown using flux method at a temperature 400 °C and oxygen pressure 200 bar. The were investigated by combination techniques, including high-resolution synchrotron X-ray single-crystal powder diffraction physical property measurements such as magnetic susceptibility resistivity. Resistivity revealed metal-insulator transition (MIT) TMIT~180 K apparent thermal hysteresis; however, no...

10.3390/cryst13020180 article EN cc-by Crystals 2023-01-19
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