A5016070313- Silicon Carbide Semiconductor Technologies
- Spaceflight effects on biology
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Ion-surface interactions and analysis
- Heart Rate Variability and Autonomic Control
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Diamond and Carbon-based Materials Research
- Thermoregulation and physiological responses
- Polymer Nanocomposite Synthesis and Irradiation
- Conducting polymers and applications
- Thin-Film Transistor Technologies
- Mining and Gasification Technologies
- High Altitude and Hypoxia
- Coal Combustion and Slurry Processing
- Field-Flow Fractionation Techniques
- Industrial Engineering and Technologies
- Veterinary medicine and infectious diseases
- Advanced ceramic materials synthesis
- Respiratory Support and Mechanisms
- Analytical Chemistry and Sensors
- Advanced Surface Polishing Techniques
- GaN-based semiconductor devices and materials
- Solidification and crystal growth phenomena
Institute of Biomedical Problems
2013-2023
State Research Center of the Russian Federation
2023
Moscow Power Engineering Institute
2023
Moscow Aviation Institute
2023
Moscow Institute of Physics and Technology
2023
National Research Center for Preventive Medicine
2016-2021
Russian Scientific Center "Applied Chemistry"
2021
Charité - Universitätsmedizin Berlin
2018
Wolfspeed, Inc. (United States)
1996-2013
Russian Academy of Sciences
1989-2013
Silicon carbide has been used to fabricate a variety of short wavelength optoelectronic devices including blue LEDs, green LEDs and UV photodiodes. As light emitter, 6H-SiC junctions can be tailored emit across the visible spectrum. The most widely commercialized device is LED. Over past years, quantum efficiency Cree Research LED increased significantly. with peak 470 nm spectral halfwidth ≈︂70 nm. optical power output typically between 25 35 μW at forward current 20 mA 3.2 V. This...
In this study we demonstrate what kind of relative alterations can be expected in average perfusion and blood flow oscillations during postural changes being measured the skin limbs on brow forehead by wearable laser Doppler flowmetry (LDF) sensors. The aims were to evaluate dynamics cutaneous regulatory mechanisms microcirculation areas interest, possible significance those effects for diagnostics based monitoring. involved 10 conditionally healthy volunteers (44 ± 12 years). Wearable...
Heavily doped p-type layers obtained by implanting aluminum near its solubility limit (∼2×1020Al∕cm3) in 4H-SiC are characterized as a function of the implant and anneal temperatures. For typical temperature 650°C, Al activation rates ∼6%–35% for anneals from 1600 to 1750°C, respectively. higher implants at 1000°C, significantly improved, approaching ∼100% same temperatures, with best resistivity ∼0.20Ωcm. SiC device fabrication, these results demonstrate that using lower temperatures can be...
The low-temperature dc conductivity and magnetoconductivity of ion-implanted (${\mathrm{Ar}}^{+}$) chemically doped (${\mathrm{H}}_{2}$${\mathrm{SO}}_{4}$) polyaniline films have been studied. metal-insulator transition has observed for on increasing the irradiation dose to 3\ifmmode\times\else\texttimes\fi{}${10}^{17}$ ions ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}2}$. maximum values room-temperature reached 800 S ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ 8 films. In both cases, samples...
Recent improvements in 6H-SiC enhancement-mode NMOS and PMOS device fabrication performance have resulted operational circuits up to 500/spl deg/C. These developments now led the first demonstration of monolithically integrated complementary MOSFET (CMOS) SiC. CMOS is an attractive technology because it readily adaptable for mixed analog digital applications. The availability current source (active) loads makes possible generate large voltage gains with relatively small supply voltages...
Objective: Cranial electrotherapy stimulation (CES) is considered to be a potential treatment for insomnia. Women are more likely suffer from insomnia than men. Therefore we studied the effect of CES on sleep efficiency in young healthy women. Methods: A randomized, controlled clinical study was conducted 40 women (age 18–35 years) without disorders. Each subject underwent two nights polysomnography center. During second night, applied with commercial device (Alpha-Stim 100) using either...
6H–SiC wafers were implanted at room temperature (RT) and 1700 °C high (HT) with 50 keVAl+ ions to doses from 1.4×1014 1.4×1016 cm−2. Compared samples RT, the display considerable aluminum redistribution. The diffusion of Al is shown be a transient effect different decay times in near-surface region bulk. Investigation crystalline structure indicated that dislocation loops grow size precipitates are formed as dose HT increased. Changes layer may have strong on redistribution Al. observed can...
Trimetazidine (TMZ) was shown to reduce angina symptoms and increase the exercise capacity in stable (SA) patients. A new formulation allowing a once-daily (od) dosage could improve patients' satisfaction adherence. ODA 3-month, observational, multicenter, prospective Russian study SA patients with persistent despite therapy. Angina attack frequency, short-acting nitrate (SAN) consumption, adherence antianginal medications, overall efficacy tolerability of TMZ 80 mg od were assessed...
SiC devices are capable of operating at very high temperatures, allowing placement electronics in temperature ambients with limited cooling. The enhancement-mode MOSFET, used extensively analog and digital circuits, has a particular advantage for operation because its insulated gate. Research this area produced n-channel depletion-mode devices/circuits gates from 25 to 300/spl deg/C. In report, we demonstrate the first p-channel MOSFETs integrated circuits good characteristics 500/spl NMOS...
Symmetric blocking power semiconductor switches require two edge terminations, one for the reverse junction and other forward junction. In this work, we demonstrated 1100V SiC symmetric terminations using orthogonal positive bevel (OPB) termination a one-zone Junction Termination Extension (JTE). The OPB was formed by orthogonally sawing 45° V-shape trenches into wafer with diamond-coated dicing blade. surface damage then repaired dry-etch in SF <sub...
Lightly-doped n-type layers have been fabricated in 4H-SiC by low-dose implantation of nitrogen ions and characterized using the Hall effect. Near-bulk electron mobility is achieved implanted layers. Activation rates for ions, energies densities two-level donor, compensation are found from fitting measured free-electron density to a charge neutrality model as function temperature. Measured activation 55% 71% 1300 1600 °C anneal temperatures, respectively. Compensation due unannealed implant...
The diffusion behavior of boron (B) and nitrogen (N) implanted in 6H 4H silicon carbide (SiC) samples was investigated using secondary ion mass spectroscopy. were either coimplanted with B N ions or each element alone. annealing performed at 1700°C for times ranging from 10to1800s argon ambient the vapors carbon. Transmission electron microscopy has been used to determine structural properties layers after annealing. concentration profiles remained unchanged atoms showed transient enhanced...