A5100745572- Radiation Effects in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Astrophysics and Cosmic Phenomena
- Neutrino Physics Research
- VLSI and Analog Circuit Testing
- Dark Matter and Cosmic Phenomena
- Particle physics theoretical and experimental studies
- Structural Response to Dynamic Loads
- Structural Engineering and Vibration Analysis
- Advanced Memory and Neural Computing
- Soil Mechanics and Vehicle Dynamics
- Evaluation and Optimization Models
- High-Velocity Impact and Material Behavior
- Advanced Measurement and Detection Methods
- Agricultural Engineering and Mechanization
- Mechanical stress and fatigue analysis
- Rock Mechanics and Modeling
- Vibration and Dynamic Analysis
- Outsourcing and Supply Chain Management
- Geotechnical Engineering and Underground Structures
- Control Systems in Engineering
- Manufacturing Process and Optimization
- Electrostatic Discharge in Electronics
- Contact Mechanics and Variational Inequalities
Southwest University of Science and Technology
2022-2024
South China Agricultural University
2022
Tianjin Research Institute of Electric Science (China)
2021
China Academy of Space Technology
2018-2019
Institute of Modern Physics
2013-2018
Chinese Academy of Sciences
1992-2018
University of Chinese Academy of Sciences
2013-2016
Harbin Engineering University
2015
Ministère de l'Agriculture et de la Souveraineté alimentaire
2014
Shanghai Ocean University
2014
Experimental evidences are presented showing obvious differences in threshold ion range for silicon-on-insulator (SOI) and bulk static random access memories (SRAMs). Single event upset (SEU) cross sections of SOI SRAMs start to decline off the Weibull curve at ranges 20.7 μm 40.6 μm, depending on species also thickness metallization layers. Whereas SRAMs, Bismuth beam is unexpectedly larger than 60.4 μm. Underlying mechanisms further revealed by Monte Carlo simulations in-depth analysis....
We investigate the impact of heavy ion irradiation on a hypothetical static random access memory (SRAM) device. Influences angle, critical charge, drain-drain spacing, and dimension device structure sensitivity have been studied. These prediction simulated results are interpreted with MUFPSA, Monte Carlo code based Geant4. The show that orientation beams different charge exert indispensable effects multiple-bit upsets (MBUs), decrease in spacing distance between adjacent cells or cells, is...
The dependence of single event upset (SEU) on heavy ion energy was investigated for partially depleted silicon-on-insulator static random access memories. An unexpected phenomenon has been shown that the SEU cross sections decrease 70% with increase <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> C linear transfer (LET) from 1.7 to 3.0 MeV/(mg/cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ). Furthermore, data angled irradiations...
Monte Carlo simulations reveal considerable straggling of energy loss by the same ions with in fully-depleted silicon-on-insulator (FDSOI) devices ultra-thin sensitive silicon layers down to 2.5 nm. The absolute deposited decreases decreasing thickness active layer. While relative increases gradually films and exhibits a sharp rise as film descends below threshold value 50 nm, dispersion ascending above ±10%. Ion species dependence energy-loss are also investigated. For given beam, results...
The influence of the metric linear energy transfer (LET) on single event upset (SEU), particularly multiple bit (MBU) in a hypothetical 90-nm static random access memory (SRAM) is explored. To explain odd point higher LET incident ion but induced lower cross section curve SEU section, MBUs by ions 132Xe and 209Bi with same different energies at oblique incidence are investigated using multi-functional package for effect analysis (MUFPSA). In addition, comprehensive analytical model radial...
Ultraviolet communication is a novel mode, which delivers massages through the scattering of ultraviolet in atmosphere. Modulation technology one key technical challenges communication. So far, system mostly uses pulsed optical intensity modulation, but this technique cannot improve performance system. Thus, BPSK subcarrier modulation introduced to based on analysis basic principle technology. In single channel model, simulated and compared with variety other technique. The simulation...
The effects of temperature on the single-event upset (SEU) response commercial and radiation-hardened SRAMs are investigated by experiment. results showed that SEU sensitivity relied during testing. However, it was also observed amplitude energy deposition ions in sensitive volume SRAM devices is able to affect sensitivity. When deposited far larger than critical value inducing a occurrence, both Bulk SOI technologies displays less dependency. This result attributed impact ion-induced...
Experimental evidence is presented relevant to the angular dependences of multiple-bit upset (MBU) rates and patterns in static random access memories (SRAMs) under heavy ion irradiation. The single event (SEU) cross sections tilted strikes are overestimated by 23.9%–84.6%, compared with normally incident equivalent linear energy transfer (LET) value ∼ 41 MeV/(mg/cm2), which can be partially explained fact that MBU rate for ions 30° 8.5%–9.8% higher than ions. While at a lower LET 9.5 no...
Experimental evidences are presented showing the variety of supply voltage dependence single event upset (SEU) sensitivity in diverse SRAM devices. Devices under test (DUTs) from Alliance Memory, ISSI and IDT companies with different technologies were irradiated by several kinds heavy ions at Heavy ion Research Facility Lanzhou (HIRFL) cyclotrons. For 256 kb device, SEU cross section increases more than one order magnitude as decreases 5.0 V to 3.0 V. data 64 also exhibits significant...
In the measurement of residual stresses (RSs) via hole-drilling method, error induced by eccentricity drilled hole is inevitable and non-negligible in some cases. this study, both coordinates RS state (two principal one angle) are considered unknowns that must be solved. A set five equations required to determine these unknowns. Therefore, two additional measuring grids added strain gauge comprising three grids, which typically used RSs. Consequently, a novel rosette with (SGR-5MG) created....
In this paper, we propose an efficient algorithm of container code characters location in complex situations based on Digital Image Processing. The proposed consists three major parts: Pre-Processing, Container detection and analysis, Extraction the region. performance has been tested a large number experimental data from random real images. tests show that method is straight forward, high efficiency, robust.
The FPGA with Avalon Bus architecture and Nios soft-core processor developed by Altera Corporation is an advanced embedded solution for control interface systems. a system A CCD data acquisition VGA display module very common in the industry design. With rapid development of systems, particular high-speed image processing, displaying real-time processing important. Based on principle display, abandoning dedicated chip using SOPC (Programmable System-on-Chip) technology, embed II 32-bit...
Using a Monte Carlo simulation tool of the multi-functional package for SEEs Analysis (MUFPSA), we study temporal characteristics ion-velocity susceptibility to single event upset (SEU) effect, including deposited energy, traversed time within device, and profile current pulse. The results show that averaged dposited energy decreases with increase ion-velocity, incident ions 209Bi have wider distribution deposition than 132Xe at same ion-velocity. Additionally, presents an obvious decreasing...