A5020520168- Semiconductor materials and devices
- Copper Interconnects and Reliability
- Analytical Chemistry and Sensors
- 3D IC and TSV technologies
- Advancements in Semiconductor Devices and Circuit Design
- Salmonella and Campylobacter epidemiology
- Molecular Junctions and Nanostructures
- Ferroelectric and Negative Capacitance Devices
- Electrochemical Analysis and Applications
- Vibrio bacteria research studies
- Electromagnetic Compatibility and Noise Suppression
- Viral gastroenteritis research and epidemiology
- Global Maternal and Child Health
- Leptospirosis research and findings
- Microwave and Dielectric Measurement Techniques
- Ferroelectric and Piezoelectric Materials
- Radio Frequency Integrated Circuit Design
- MXene and MAX Phase Materials
- Esophageal and GI Pathology
- Antibiotic Resistance in Bacteria
- Mechanical and Optical Resonators
- Diagnosis and treatment of tuberculosis
- Microwave Engineering and Waveguides
- Microfluidic and Capillary Electrophoresis Applications
- Gastrointestinal disorders and treatments
Duncan Village Day Hospital
2023
University of Minnesota
2018-2021
STMicroelectronics (Switzerland)
2005-2008
STMicroelectronics (France)
2005-2008
STMicroelectronics (India)
2007
Centre National de la Recherche Scientifique
2005-2006
In 2017, more than half the cases of typhoid fever worldwide were projected to have occurred in India. absence contemporary population-based data, it is unclear whether declining trends hospitalization for India reflect increased antibiotic treatment or a true reduction infection.
The floating gate, electrolyte-gated transistor (FGT) is a chemical sensing device utilizing gate electrode to physically separate and electronically couple the active area with transistor. FGT platform has yielded promising results for detection of DNA proteins, but questions remain regarding its fundamental operating mechanism. Using carboxylic acid-terminated self-assembled monolayers (SAMs) exposed solutions different pH, we create charged surface hence characterize role that interfacial...
Printed electrolyte-gated transistors (EGTs) are an emerging biosensor platform that leverage the facile fabrication engendered by printed electronics with low voltage operation enabled ion gel dielectrics. The resulting label-free, nonoptical sensors have high gain and provide sensing operations can be challenging for conventional chemical field effect transistor architectures. After providing overview of EGT device operation, we highlight opportunities microfluidic enhancement sensor...
Lack of robust data on economic burden due to enteric fever in India has made decision making typhoid vaccination a challenge. Surveillance for Enteric Fever network was established address gaps disease and burden.
Floating-gate transistors (FGTs) are a promising class of electronic sensing architectures that separate the transduction elements from molecular components, but factors leading to optimum device design unknown. We developed model, generalizable many different semiconductor/dielectric materials and channel dimensions, predict sensor response changes in capacitance and/or charge at surface upon target binding or other chemistry. The model predictions were compared experimental data obtained...
Ileal perforation occurs in about 1% of enteric fevers as a complication, with case fatality risk (CFR) 20%-30% the early 1990s that decreased to 15.4% 2011 South East Asia. We report nontraumatic ileal perforations and its associated CFR from 2-year prospective fever surveillance across India.The Surveillance for Enteric Fever India (SEFI) project established multitiered system between December 2017 March 2020. Nontraumatic were surveilled at 8 tertiary care 6 secondary hospitals classified...
The electrolyte gated transistor with a floating gate (FGT) is promising sensing platform for both chemical and biodetection applications due to its fast, label-free response, low voltage operation, simple fabrication by printing conventional lithography. We present here unified framework understanding how FGTs measure changes in interfacial capacitance surface charge, using self-assembled monolayers (SAMs) on the FGT detection area as model systems. measurements take advantage of alkyl...
RF and analog designs require high performances MIM capacitors. In order to continue downscaling of devices, we have developed integrated a 3D damascene capacitor in the copper back-end 0.13 mum BICMOS technology. Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> has been used as dielectric reach excellent for 5 fF/mum <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>...
A new simple 3D Damascene architecture requiring only one additional mask is introduced for high-density MIM capacitors. TiN/Ta <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> /TiN stack deposited by PEALD has been integrated between Cu interconnect levels to maximize quality factor Q, reaching up 17 fF/μm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> capacitance....
High-frequency simulations and characterizations of advanced metal-insulator-metal (MIM) capacitors with ultra thin 32 nm PECVD Si/sub 3/N/sub 4/ dielectric are presented. The frequency dependent behavior is numerically experimentally extracted over a wide bandwidth. Numerical results validated by comparison to experimental results. An equivalent circuit model including four parameters developed for better understanding the behavior. We focused on impact design performances MIM realized Si...
Abstract The Global Typhoid Genomics Consortium was established to bring together the typhoid research community aggregate and analyse Salmonella enterica serovar Typhi (Typhi) genomic data inform public health action. This analysis, which marks twenty-one years since publication of first genome, represents largest genome sequence collection date (n=13,000), provides a detailed overview global genotype antimicrobial resistance (AMR) distribution temporal trends, generated using open analysis...
MIM capacitors are widely integrated for RF and analog applications. A high density full PEALD TiN/Ta <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> /TiN capacitor is among copper interconnect following an innovative 3D damascene architecture. The impact of a TaN/Ta layer, introduced to avoid Cu diffusion, on both TiN electrode properties stack performance studied. Unexpected lower...
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> High-frequency characterizations of ultra thin 32 nm PECVD Si<formula formulatype="inline"><tex Notation="TeX">$_{3}$</tex></formula>N<formula formulatype="inline"> <tex Notation="TeX">$_{4}$</tex></formula> dielectric in an advanced metal–insulator–metal (MIM) capacitors are presented, with focus on the impact design performance MIM capacitors. Frequency dependent capacitance has been extracted...
RF and analog designs require high performances MIM capacitors. In order to continue the downscaling of devices, we proposed integrated a 3D damascene capacitor using Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> dielectric in copper back-end 0.13 μm BICMOS technology. Layout process have been recently optimized reach excellent reliability while keeping very good performances.
High frequency characterizations of ultra thin 32 nm PECVD Si 3 N 4 dielectric on advanced metal-insulator-metal (MIM) capacitors are presented. We focused the impact design performances MIM realized substrates. The dependent behavior capacitance is extracted over a wide bandwidth. An equivalent circuit model including four parameters developed to explain this behavior. Results compared values obtained by 3D Electro-Magnetic modeling.
High frequency characterizations and simulations of 3D damascene Metal-Insulator-Metal (MIM) capacitors are presented. We focused on the impact design performance integrated capacitors. Results showed that properties MIM capacitor get improved with specific recommendations electrodes shape.
High-frequency (HF) characterisations of 2D and 3D metal–insulator–metal (MIM) damascene capacitors are presented focusing on the impact MIM architecture HF performance integrated in back end line with Si3N4 as insulating material. Dedicated test structures were characterisation methods developed. Results show that properties (parasitic inductance cutoff frequency) improve architecture.
High frequency characterizations of high-K dielectrics and advanced metal-insulator-metal (MIM) capacitors are presented. This work deals with the impact process on materials permittivity effect architectures MIM electrical performances.
Metal-insulator-metal (MIM) capacitors are key components in radio frequency integrated circuits. In this paper, several 0.12 mum-CMOS Cu-Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> -Cu realized with damascene architecture and whose process allows high-k dielectric compatibility have been designed characterised from 45 MHz to 40 GHz. Large band equivalent electrical models...
High frequency characterizations and simulations of advanced metal-insulator-metal (MIM) capacitors in Cu/low-k backend interconnection process are presented. First, we focus on the impact silicon substrate design MIM high performance. Numerical results obtained by a 3D electromagnetic modeling validated comparison to experimental results. Second, show possibility increase HF electrical performance capacitor with optimized integration new medium or high-k materials.