M. A. Giorgi
- Particle physics theoretical and experimental studies
- Quantum Chromodynamics and Particle Interactions
- High-Energy Particle Collisions Research
- Particle Detector Development and Performance
- Neutrino Physics Research
- Dark Matter and Cosmic Phenomena
- Medical Imaging Techniques and Applications
- Particle Accelerators and Free-Electron Lasers
- Radiation Detection and Scintillator Technologies
- Atomic and Subatomic Physics Research
- Computational Physics and Python Applications
- Black Holes and Theoretical Physics
- CCD and CMOS Imaging Sensors
- Cosmology and Gravitation Theories
- Nuclear physics research studies
- Superconducting Materials and Applications
- Radiation Effects in Electronics
- Advanced Data Storage Technologies
- Radiation Therapy and Dosimetry
- Cold Atom Physics and Bose-Einstein Condensates
- Silicon and Solar Cell Technologies
- Scientific Research and Discoveries
- Advanced Electrical Measurement Techniques
- Computability, Logic, AI Algorithms
- Lanthanide and Transition Metal Complexes
University of Pisa
2008-2021
Istituto Nazionale di Fisica Nucleare, Sezione di Pisa
2008-2021
Johns Hopkins University
2014
Budker Institute of Nuclear Physics
2014
Novosibirsk State Technical University
2014
Campbell Collaboration
2013
University of Oregon
2009
Scuola Normale Superiore
1990-2006
University of Perugia
2002
Laboratoire d’Annecy de Physique des Particules
2001
This chapter of the report "Flavor in era LHC" Workshop discusses theoretical, phenomenological and experimental issues related to flavor phenomena charged lepton sector conserving CP-violating processes. We review current limits main theoretical models for structure fundamental particles. analyze consequences available data, setting constraints on explicit beyond standard model, presenting benchmarks discovery potential forthcoming measurements both at LHC low energy, exploring options...
The BABAR silicon vertex tracker (SVT) has been in operation for four years at the PEP-II electron-positron storage ring. During this time SVT modules have accumulated a radiation dose up to 2 Mrad. We study degradation performance of due which is highly non uniform across device and also within individual detectors. To extrapolate future we separately effect irradiation on detectors, front end integrated circuits complete detector module under controlled conditions, using /sup 60/Co source...
NPN bipolar phototransistors have been designed and fabricated on high-resistivity silicon substrates of different thicknesses, up to 800 /spl mu/m. A technology featuring a double implant for the emitter allowed us obtain typical current gain about 600. The device has used detect alpha/ particles from /sup 239/Pu source, beta/ 90/Sr X-rays 241/Am using simple experimental set-up, by directly connecting detector scope. In case electrons, pulse heights 100 mV observed, with length 50/spl...
The silicon vertex tracker (SVT) of the BaBar experiment at PEP-II is described. This crucial device for measurement B meson decay vertices to extract charge-conjugation parity (CP) asymmetries. It consists five layers double-sided ac-coupled strip detectors, read out by a full-custom integrated circuit, capable simultaneous acquisition, digitization, and transmission data. represents core tracking system, providing position measurements with precision 10 /spl mu/m (inner layers) 30 (outer...
The silicon vertex tracker (SVT) of the BaBar experiment at PEP II is briefly described. It consists five layers double-sided AC-coupled strip detectors, constituting core tracking system. After six years operation, some unexpected effects have appeared. In particular, a shift in pedestal for channels AToM readout chips that are most exposed to radiation has been observed. behavior understood and reproduced chip irradiations with 1-GeV electrons Elettra (Trieste) results studies presented...
This work is concerned with the design of a readout chip for application to experiments at next generation X-ray Free Electron Lasers (FEL). The ASIC, named PixFEL Matrix (PFM2), has been designed in 65 nm CMOS technology and consists 32 × pixels. Each cell covers an area 110 μm2 includes low-noise charge sensitive amplifier (CSA) dynamic signal compression, time-variant shaper used process preamplifier output signal, 10-bit successive approximation register (SAR) analog-to-digital converter...