Maud Baylac
A5090218251- Particle accelerators and beam dynamics
- Particle Accelerators and Free-Electron Lasers
- Radiation Effects in Electronics
- VLSI and Analog Circuit Testing
- Particle physics theoretical and experimental studies
- Nuclear Physics and Applications
- Plasma Diagnostics and Applications
- Quantum Chromodynamics and Particle Interactions
- Superconducting Materials and Applications
- Magnetic confinement fusion research
- High-Energy Particle Collisions Research
- Atomic and Subatomic Physics Research
- Particle Detector Development and Performance
- Integrated Circuits and Semiconductor Failure Analysis
- Physical Unclonable Functions (PUFs) and Hardware Security
- Photocathodes and Microchannel Plates
- Muon and positron interactions and applications
- Semiconductor materials and devices
- Dark Matter and Cosmic Phenomena
- Atomic and Molecular Physics
- Low-power high-performance VLSI design
- Electron and X-Ray Spectroscopy Techniques
- Nuclear reactor physics and engineering
- Radiation Therapy and Dosimetry
- Neutrino Physics Research
Université Grenoble Alpes
2014-2024
Institut National de Physique Nucléaire et de Physique des Particules
2014-2024
Centre National de la Recherche Scientifique
2014-2024
Laboratoire de Physique Subatomique et de Cosmologie
2015-2024
Institut polytechnique de Grenoble
2018-2022
Ball (France)
2014
National Superconducting Cyclotron Laboratory
2014
Michigan State University
2014
Moscow Engineering Physics Institute
2014
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
1999-2012
We have measured the parity-violating electroweak asymmetry in elastic scattering of polarized electrons from protons. Significant contributions to this could arise strange form factors nucleon. The is $A=\ensuremath{-}15.05\ifmmode\pm\else\textpm\fi{}0.98(\mathrm{stat})\ifmmode\pm\else\textpm\fi{}0.56(\mathrm{syst})\phantom{\rule{0.3em}{0ex}}\mathrm{ppm}$ at kinematic point $⟨{\ensuremath{\theta}}_{\mathrm{lab}}⟩=12.3\ifmmode^\circ\else\textdegree\fi{}$ and...
The Polarized Electrons for Positrons experiment at the injector of Continuous Electron Beam Accelerator Facility has demonstrated first time efficient transfer polarization from electrons to positrons produced by polarized bremsstrahlung radiation induced a electron beam in high-Z target. Positron up 82% have been measured an initial momentum 8.19 MeV/c, limited only polarization. This technique extends positron capabilities GeV MeV beams, and opens access physics wide community.
We have measured the parity-violating electroweak asymmetry in elastic scattering of polarized electrons from proton. The kinematic point [ $〈{\ensuremath{\theta}}_{\mathrm{lab}}〉\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}12.3\ifmmode^\circ\else\textdegree\fi{}$ and $〈{Q}^{2}〉\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}0.48(\mathrm{GeV}/c{)}^{2}$] is chosen to provide sensitivity, at a level that theoretical interest, strange electric form factor ${G}_{E}^{s}$. result,...
We observe a deuteron beam polarization lifetime near 1000 s in the horizontal plane of magnetic storage ring (COSY). This long spin coherence time is maintained through combination bunching, electron cooling, sextupole field corrections, and suppression collective effects current limits. record required for search an intrinsic electric dipole moment on at statistical sensitivity level approaching 10^{-29} e cm.
GENEPI2 is an accelerator facility located in Grenoble (France) which can provide neutrons of 3 MeV or 15 MeV. Preliminary irradiation SRAMs showed results compatible with those issued from other facilities.
A sensitivity characterization of a Xilinx Artix-7 field programmable gate array (FPGA) against 14.2-MeV neutrons is presented. The content the internal static random access memories (SRAMs) and flip-flops was downloaded in PC compared with golden version it. Flipped cells were identified classified as configuration RAM, block RAM (BRAM), or flip-flops. Single bit upsets (SBUs) multiple cell (MCUs) multiplicities ranging from 2 to 8 using statistical method. Possible shapes events are also...
This work evaluates the SEE static and dynamic sensitivity of a single-chip many-core processor having implemented 16 compute clusters, each one with processing cores. The SEU error-rate an application in device is predicted by combining experimental results those issued from fault injection campaigns applying CEU (Code Emulating Upsets) approach. In addition, comparison tests when processing-cores cache memories are enabled disabled presented. experiments were validated through radiation...
The French IRT-Nanoelec consortium in collaboration with GENEPI2 accelerator is offering world unique and complementary techniques for Hirel components characterisation. Part of this capability the high low (thermal) energy neutron testing devices.
Hardware-implemented intelligent systems running autonomous functions and decisions are today becoming more ubiquitous in many fields of applications, demanding reliable operation even under harsh conditions as nuclear power plants avionics altitudes. Support vector machine (SVM) is a prominent learning solution to optimize hardware-implemented systems. This paper the first assess field-programmable gate array (FPGA)-designed SVM architecture radiation effects. A fault emulation campaign...
We report a virtual Compton scattering study of the proton at low c.m. energies. have determined structure functions PLL−PTT/ϵ and PLT, electric magnetic generalized polarizabilities (GPs) αE(Q2) βM(Q2) momentum transfer Q2=0.92 1.76 GeV2. The GP shows strong falloff with Q2, its global behavior does not follow simple dipole form. rise then falloff; this can be interpreted as dominance long-distance diamagnetic pion cloud compensated higher Q2 by paramagnetic contribution from πN...
Virtual Compton Scattering (VCS) on the proton has been studied at Jefferson Lab using exclusive photon electroproduction reaction (e p --> e gamma). This paper gives a detailed account of analysis which led to determination structure functions P_LL-P_TT/epsilon and P_LT, electric magnetic generalized polarizabilities (GPs) alpha_E(Q^2) beta_M(Q^2) values four-momentum transfer squared Q^2= 0.92 1.76 GeV^2. These data, together with results VCS experiments lower momenta, help building...
Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including new memory cell design combining cells and DRAM capacitors to determine if, as claimed, it is soft-error free estimate upper bounds for the cross-section. These led cross-section values two orders of magnitude below those typical CMOS SRAMs same technology node. MUSCA SEP3 simulations complement these results predicting that only high-energy ( > 30 MeV) can provoke bit flips studied SRAMs. also used investigate...
This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltage of three generations commercial off-the-shelf static random access memories (SRAMs) manufactured in 130-, 90-, and 65-nm CMOS processes. For this purpose, radiation tests with 14.2-MeV neutrons were performed for SRAM power supplies ranging from 0.5 to 3.15 V. The experimental results yielded clear evidences the SEU increase very low voltages. These have been cross-checked predictions issued...
Recently, the occurrence of multiple events in static tests has been investigated by checking statistical distribution difference between addresses words containing bitflips. That method successfully applied to Field Programmable Gate Arrays (FPGAs) and original authors indicate that it is also valid for SRAMs. This paper presents a modified methodology based on XORed with bitflips, rather than difference. Irradiation CMOS 130 & 90 nm SRAMs 14-MeV neutrons have performed validate this...
Exclusive electroproduction of pi0 mesons on protons in the backward hemisphere has been studied at Q**2 = 1.0 GeV**2 by detecting forward direction coincidence with scattered electrons from 4 GeV electron beam Jefferson Lab's Hall A. The data span range total (gamma* p) center-of-mass energy W pion production threshold to 2.0 GeV. differential cross sections sigma_T+epsilon*sigma_L, sigma_TL, and sigma_TT were separated azimuthal distribution are presented together MAID SAID parametrizations.
This paper presents the characterization of sensitivity to 14-MeV neutrons a commercial off-the-shelf 90-nm static random access memories manufactured by Cypress Semiconductor, when biased at ultralow voltage. First, experiments exposing this memory neutrons, powering it up bias voltages ranging from 0.5 3.3 V, are presented and discussed. These results in good concordance with theoretical predictions issued modeling tool MUlti-SCAles Single Event Phenomena Predictive Platform. Then, has...
The aim of this work is to evaluate the SEE sensitivity a multi-core processor having implemented ECC and parity in their cache memories. Two different application scenarios are studied. first one configures Asymmetric Multi-Processing mode running memory-bound application, whereas second uses Symmetric CPU-bound application. experiments were validated through radiation ground testing performed with 14 MeV neutrons on Freescale P2041 manufactured 45 nm SOI technology. A deep analysis...